Li Songyu, Zhang Zeyu, Chen Xiaoqing, Deng Wenjie, Lu Yue, Sui Manling, Gong Fan, Xu Guoliang, Li Xuhong, Liu Famin, You Congya, Chu Feihong, Wu Yi, Yan Hui, Zhang Yongzhe
Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China.
School of Physics, Beihang University, Beijing, 100191, China.
Adv Mater. 2022 Mar;34(10):e2107734. doi: 10.1002/adma.202107734. Epub 2022 Jan 31.
The emerging data-intensive applications in optoelectronics are driving innovation toward the fused integration of sensing, memory, and computing to break through the restrictions of the von Neumann architecture. However, the present photodetectors with only optoelectronic conversion functions cannot satisfy the growing demands of the multifunctions required in single devices. Here, a novel route for the integration of non-volatile memory into a photodetector is proposed, with a WSe /h-BN van der Waals heterostructure on a Si/SiO substrate to realize in-memory photodetection. This photodetector exhibits an ultrahigh readout photocurrent of 3.4 µA and photoresponsivity of 337.8 A W in the solar-blind wavelength region, together with an extended retention time of more than 10 years. Furthermore, the charge-storage-based non-volatile mechanism of h-BN/SiO is successfully proven through a novel analysis of in situ optoelectronic electron energy-loss spectroscopy. These results represent a leap forward to future applications and insightful mechanisms of in-memory photodetection.
光电子学中新兴的数据密集型应用正在推动创新，朝着传感、存储和计算的融合集成发展，以突破冯·诺依曼架构的限制。然而，目前仅具有光电转换功能的光电探测器无法满足单个器件中对多功能日益增长的需求。在此，提出了一种将非易失性存储器集成到光电探测器中的新途径，即在Si/SiO₂衬底上采用WSe₂/h-BN范德华异质结构来实现内存内光电探测。该光电探测器在日盲波长区域表现出3.4 μA的超高读出光电流和337.8 A/W的光响应度，同时具有超过10年的延长保持时间。此外，通过对原位光电电子能量损失谱的新颖分析，成功证明了h-BN/SiO₂基于电荷存储的非易失性机制。这些结果代表了内存内光电探测在未来应用和深刻机制方面的一大飞跃。
