Opt Lett. 2022 Feb 15;47(4):937-940. doi: 10.1364/OL.447636.
Silicon nitride (SiN) is used extensively to complement the standard silicon photonics portfolio. However, thus far demonstrated light sources and detectors on SiN have predominantly focused on telecommunication wavelengths. Yet, to unlock the full potential of SiN, integrated photodetectors for wavelengths below 850 nm are essential to serve applications such as biosensing, imaging, and quantum photonics. Here, we report the first, to the best of our knowledge, microtransfer printed Si p-i-n photodiodes on a commercially available SiN platform to target wavelengths <850 nm. A novel heterogeneous integration process flow was developed to offer a high microtransfer printing yield. Moreover, these devices are fabricated with CMOS compatible and wafer-scale technology.
氮化硅（SiN）被广泛用于补充标准的硅光子学产品组合。然而，迄今为止，在 SiN 上演示的光源和探测器主要集中在电信波长上。然而，为了充分发挥 SiN 的潜力，用于 850nm 以下波长的集成光电探测器对于生物传感、成像和量子光子学等应用至关重要。在这里，我们报告了我们所知的第一个在商业上可获得的 SiN 平台上的微转移印刷 Si p-i-n 光电二极管，其目标波长为 <850nm。开发了一种新颖的异质集成工艺流程，以提供高微转移打印产量。此外，这些器件采用与 CMOS 兼容的晶圆级技术制造。
