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用于实现高电流密度和超稳定电流的晶体亚微米至纳米碳线的制备

Fabrication of crystalline submicro-to-nano carbon wire for achieving high current density and ultrastable current.

作者信息

Deng Jufeng, Liu Chong, Song Dian, Madou Marc

机构信息

School of Mechanical Engineering, Dalian University of Technology, Dalian, 116023 China.

Mechanical and Aerospace Engineering, University of California, Irvine, CA 92617 USA.

出版信息

Microsyst Nanoeng. 2022 Feb 4;8:15. doi: 10.1038/s41378-021-00345-z. eCollection 2022.

Abstract

Crystalline carbon nanowire arrays were fabricated taking advantage of near-field electrospinning and stress decyanation. A novel fabrication method for carbon nanowires with radii ranging from ~2.15 µm down to ~25 nm was developed based on implementing nitrogen pretreatment on the silica surface and then aligning polymer nanofibers during near-field electrospinning at an ultralow voltage. Stress decyanation was implemented by subsequently pyrolyzing a polymer nanofiber array on the silica surface at 1000 °C for 1 h in an N atmosphere, thus obtaining a crystalline carbon nanowire array with a nanostructured surface. Various crystalline nanostructures were fabricated on the nanowire surface, and their electrochemical performance was evaluated by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). Crystalline carbon wires with diameters ranging from micrometers to submicrometers displayed carbon nanoelectrode-like behavior with their CV curve having a sigmoidal shape. A highly crystalline carbon nanowire array showed distinct behavior, having a monotonically increasing straight line as its CV curve and a semicircular EIS spectrum; these results demonstrated its ultrastable current, as determined by electron transfer. Furthermore, nanocrystalline-structured carbon wires with diameters of ~305 nm displayed at least a fourfold higher peak current density during CV (4000 mA/m) than highly crystalline carbon nanowires with diameters of ~100 nm and porous microwires with diameters of ~4.3 µm.

摘要

利用近场静电纺丝和应力脱氰制备了晶体碳纳米线阵列。基于对二氧化硅表面进行氮预处理,然后在超低压下近场静电纺丝过程中使聚合物纳米纤维排列,开发了一种制备半径范围从约2.15μm至约25nm的碳纳米线的新方法。通过随后在氮气气氛中于1000℃将二氧化硅表面的聚合物纳米纤维阵列热解1小时来实现应力脱氰,从而获得具有纳米结构表面的晶体碳纳米线阵列。在纳米线表面制备了各种晶体纳米结构,并通过循环伏安法(CV)和电化学阻抗谱(EIS)评估了它们的电化学性能。直径从微米到亚微米的晶体碳线表现出类似碳纳米电极的行为,其CV曲线呈S形。高度结晶的碳纳米线阵列表现出独特的行为,其CV曲线为单调增加的直线,EIS谱为半圆形;这些结果表明其由电子转移决定的超稳定电流。此外,直径约305nm的纳米晶体结构碳线在CV期间显示出的峰值电流密度比直径约100nm的高度结晶碳纳米线和直径约4.3μm的多孔微线至少高四倍(4000mA/m)。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c0d9/8814151/ff56d20bb818/41378_2021_345_Fig1_HTML.jpg

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