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三维电化学轴向光刻在硅微纳线阵列上的应用。

Three-Dimensional Electrochemical Axial Lithography on Si Micro- and Nanowire Arrays.

机构信息

Department of Chemistry and Physics of Materials , University of Salzburg , Jakob Haringer Strasse 2A , A-5020 Salzburg , Austria.

Institute of Particle Technology , Friedrich-Alexander University Erlangen-Nürnberg , Cauerstrasse 4 , 91058 Erlangen , Germany.

出版信息

Nano Lett. 2018 Nov 14;18(11):7343-7349. doi: 10.1021/acs.nanolett.8b03608. Epub 2018 Oct 25.

Abstract

A templated electrochemical technique for patterning macroscopic arrays of single-crystalline Si micro- and nanowires with feature dimensions down to 5 nm is reported. This technique, termed three-dimensional electrochemical axial lithography (3DEAL), allows the design and parallel fabrication of hybrid silicon nanowire arrays decorated with complex metal nano-ring architectures in a flexible and modular approach. While conventional templated approaches are based on the direct replication of a template, our method can be used to perform high-resolution lithography on pre-existing nanostructures. This is made possible by the synthesis of a porous template with tunable dimensions that guides the deposition of well-defined metallic shells around the Si wires. The synthesis of a variety of ring architectures composed of different metals (Au, Ag, Fe, and Ni) with controlled sequence, height, and position along the wire is demonstrated for both straight and kinked wires. We observe a strong enhancement of the Raman signal for arrays of Si nanowires decorated with multiple gold rings due to the plasmonic hot spots created in these tailored architectures. The uniformity of the fabrication method is evidenced by a homogeneous increase in the Raman signal throughout the macroscopic sample. This demonstrates the reliability of the method for engineering plasmonic fields in three dimensions within Si wire arrays.

摘要

本文报道了一种用于将特征尺寸低至 5nm 的单晶 Si 微纳线进行宏观阵列图案化的模板电化学技术。这种被称为三维电化学轴向光刻(3DEAL)的技术允许以灵活和模块化的方式设计和并行制造具有复杂金属纳米环结构的混合硅纳线阵列。虽然传统的模板方法基于模板的直接复制,但我们的方法可以用于对现有纳米结构进行高分辨率光刻。这是通过合成具有可调尺寸的多孔模板来实现的,该模板可以引导在 Si 线周围沉积定义明确的金属壳。对于直丝和扭丝,都展示了由不同金属(Au、Ag、Fe 和 Ni)组成的各种环形结构的合成,其具有可控的顺序、高度和在丝上的位置。由于在这些定制结构中产生了等离子体热点,因此我们观察到用多个金环装饰的 Si 纳米线阵列的拉曼信号得到了强烈增强。整个宏观样品中拉曼信号的均匀增加证明了该制造方法的可靠性,这种方法可用于在 Si 线阵列中三维工程等离子体场。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6718/6238956/5111aefb1378/nl-2018-03608h_0001.jpg

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