通过添加PrMnO对基于ZnO-VO的压敏电阻进行晶粒生长控制。

The Grain Growth Control of ZnO-VO Based Varistors by PrMnO Addition.

作者信息

Xu Maofeng, Cai Changkun, Shi Yu, Xie Manyi, Wu Yanlong, Liu Yuanyuan, Peng Jun, Bao Jinxiao, An Shengli

机构信息

School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China.

Inner Mongolia Key Laboratory of Advanced Ceramic Materials and Devices, Inner Mongolia University of Science and Technology, Baotou 014010, China.

出版信息

Micromachines (Basel). 2022 Jan 29;13(2):214. doi: 10.3390/mi13020214.

DOI:10.3390/mi13020214

PMID:35208337

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8875393/

Abstract

In this study, the grain growth behaviour of ZnO-VO-based ceramics with 0.25-0.75 mol% additions of PrMnO was systematically investigated during sintering from 850 °C to 925 °C. with the aim to control the ZnO grain size for their application as varistors. It was found that with the increased addition of PrMnO, in addition to the decrease in the average grain size, the grain size distribution also narrowed and eventually changed from a bimodal to unimodal distribution after a 0.75 mol% PrMnO addition. The grain growth control was achieved by a pinning effect of the secondary ZnCrO and PrVO phases at the ZnO grain boundaries. The apparent activation energy of the ZnO grain growth in these ceramics was found to increase with increased additions of PrVO, hence the observed reduction in the ZnO grain sizes.

摘要

在本研究中，系统地研究了添加0.25 - 0.75 mol% PrMnO的ZnO-VO基陶瓷在850℃至925℃烧结过程中的晶粒生长行为，目的是为了将其用作压敏电阻来控制ZnO晶粒尺寸。结果发现，随着PrMnO添加量的增加，除了平均晶粒尺寸减小外，晶粒尺寸分布也变窄，在添加0.75 mol% PrMnO后最终从双峰分布变为单峰分布。通过二次ZnCrO和PrVO相在ZnO晶界处的钉扎效应实现了晶粒生长控制。发现这些陶瓷中ZnO晶粒生长的表观活化能随着PrVO添加量的增加而增加，因此观察到ZnO晶粒尺寸减小。