Telesca Fabio, Signorelli Fabio, Tosi Alberto
Opt Express. 2022 Jan 31;30(3):4504-4514. doi: 10.1364/OE.444536.
InGaAs/InP single-photon avalanche diodes (SPADs) are nowadays employed in many photon-counting applications in the near-infrared range. Photon detection efficiency (PDE) is one of the most important parameters of these detectors and here we present a model to precisely estimate it at different temperatures. Starting from optical and electrical TCAD simulations, we selected the most suitable models for the complex refractive indexes, ionization coefficients and minority carrier lifetime from the literature, and adjusted them so to include temperature and doping dependences. The good agreement between measured and simulated curves shows that our model is a valid tool to estimate PDE before device fabrication.
如今，铟镓砷/磷化铟单光子雪崩二极管（SPAD）被应用于许多近红外范围内的光子计数应用中。光子探测效率（PDE）是这些探测器最重要的参数之一，在此我们提出一个模型，用于精确估计其在不同温度下的值。从光学和电学的TCAD模拟开始，我们从文献中选择了最适合复折射率、电离系数和少数载流子寿命的模型，并对其进行调整以纳入温度和掺杂依赖性。测量曲线与模拟曲线之间的良好一致性表明，我们的模型是在器件制造之前估计PDE的有效工具。
