新型硅技术使单光子雪崩二极管的高性能阵列成为可能。
New silicon technologies enable high-performance arrays of Single Photon Avalanche Diodes.
作者信息
Gulinatti Angelo, Rech Ivan, Maccagnani Piera, Cova Sergio, Ghioni Massimo
机构信息
Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, piazza Leonardo da Vinci 32 - 20133 Milano, Italy.
IMM-CNR sezione di Bologna, Via Piero Gobetti, 101 - 40129 Bologna, Italy.
出版信息
Proc SPIE Int Soc Opt Eng. 2013 May 29;8727:87270M-. doi: 10.1117/12.2016384.
Abstract
In order to fulfill the requirements of many applications, we recently developed a new technology aimed at combining the advantages of traditional thin and thick silicon Single Photon Avalanche Diodes (SPAD). In particular we demonstrated single-pixel detectors with a remarkable improvement in the Photon Detection Efficiency at the longer wavelengths (e.g. 40% at 800nm) while maintaining a timing jitter better than 100ps. In this paper we will analyze the factors the currently prevent the fabrication of arrays of SPADs by adopting such a Red-Enhanced (RE) technology and we will propose further modifications to the device structure that will enable the fabrication of high performance RE-SPAD arrays for photon timing applications.
摘要
为了满足许多应用的需求，我们最近开发了一种新技术，旨在结合传统薄型和厚型硅单光子雪崩二极管（SPAD）的优点。特别是，我们展示了单像素探测器，其在较长波长处的光子探测效率有显著提高（例如，在800nm处为40%），同时保持了优于100ps的定时抖动。在本文中，我们将分析目前采用这种红增强（RE）技术制造SPAD阵列时阻碍制造的因素，并提出对器件结构的进一步修改，这将能够制造用于光子定时应用的高性能RE-SPAD阵列。
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