电阻式随机存取存储器（RRAM）读取波动对编程验证方法的影响。
Impact of RRAM Read Fluctuations on the Program-Verify Approach.
作者信息
Nminibapiel David M, Veksler Dmitry, Kim J-H, Shrestha Pragya R, Campbell Jason P, Ryan Jason T, Baumgart Helmut, Cheung Kin P
机构信息
Engineering Physics Division at National Institute Standards and Technology (NIST), Gaithersburg, MD 20899 USA.
Engineering Physics Division at NIST, Gaithersburg, MD 20899 USA.
出版信息
IEEE Electron Device Lett. 2017 Jun;38(6):736-739. doi: 10.1109/LED.2017.2696002. Epub 2017 May 2.
The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that program-verify methods are unworkable due to strong resistance state relaxation after SET/RESET programming. In this paper, we demonstrate that resistance state relaxation is not the main culprit. Instead, it is fluctuation-induced false-reading (triggering) that defeats the program-verify method, producing a large distribution tail immediately after programming. The fluctuation impact on the verify mechanism has serious implications on the overall write/erase speed of RRAM.
氧化物基电阻式存储器（RRAM）中导电细丝的随机性对其商业化构成了相当大的阻碍。因此，编程验证方法极具吸引力。然而，最近的研究表明，由于SET/RESET编程后存在强烈的电阻状态弛豫现象，编程验证方法是不可行的。在本文中，我们证明电阻状态弛豫并非主要原因。相反，是波动引起的误读（触发）导致编程验证方法失效，在编程后立即产生较大的分布尾部。波动对验证机制的影响对RRAM的整体写入/擦除速度有着严重的影响。
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