Nminibapiel David M, Veksler Dmitry, Kim J-H, Shrestha Pragya R, Campbell Jason P, Ryan Jason T, Baumgart Helmut, Cheung Kin P
Engineering Physics Division at National Institute Standards and Technology (NIST), Gaithersburg, MD 20899 USA.
Engineering Physics Division at NIST, Gaithersburg, MD 20899 USA.
IEEE Electron Device Lett. 2017 Jun;38(6):736-739. doi: 10.1109/LED.2017.2696002. Epub 2017 May 2.
The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that program-verify methods are unworkable due to strong resistance state relaxation after SET/RESET programming. In this paper, we demonstrate that resistance state relaxation is not the main culprit. Instead, it is fluctuation-induced false-reading (triggering) that defeats the program-verify method, producing a large distribution tail immediately after programming. The fluctuation impact on the verify mechanism has serious implications on the overall write/erase speed of RRAM.
氧化物基电阻式存储器（RRAM）中导电细丝的随机性对其商业化构成了相当大的阻碍。因此，编程验证方法极具吸引力。然而，最近的研究表明，由于SET/RESET编程后存在强烈的电阻状态弛豫现象，编程验证方法是不可行的。在本文中，我们证明电阻状态弛豫并非主要原因。相反，是波动引起的误读（触发）导致编程验证方法失效，在编程后立即产生较大的分布尾部。波动对验证机制的影响对RRAM的整体写入/擦除速度有着严重的影响。
