Mitterreiter Elmar, Schuler Bruno, Micevic Ana, Hernangómez-Pérez Daniel, Barthelmi Katja, Cochrane Katherine A, Kiemle Jonas, Sigger Florian, Klein Julian, Wong Edward, Barnard Edward S, Watanabe Kenji, Taniguchi Takashi, Lorke Michael, Jahnke Frank, Finley Johnathan J, Schwartzberg Adam M, Qiu Diana Y, Refaely-Abramson Sivan, Holleitner Alexander W, Weber-Bargioni Alexander, Kastl Christoph
Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany.
Munich Center for Quantum Science and Technology (MCQST), München, Germany.
Nat Commun. 2021 Jun 22;12(1):3822. doi: 10.1038/s41467-021-24102-y.
For two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab initio theory of chalcogen vacancies in monolayer MoS. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.
对于二维（2D）层状半导体而言，控制原子缺陷并理解其电子和光学功能是利用此类材料开发成熟半导体技术面临的主要挑战。在此，我们将单层MoS中硫族元素空位的产生、光谱学、原子分辨率成像和从头算理论关联起来。硫族元素空位可通过真空退火选择性产生，也可通过聚焦离子束曝光产生。缺陷产生率、原子成像和光学特征均支持这一说法。我们区分了空位的窄线宽光致发光特征（主要源于局域缺陷轨道）与同一光谱范围内由吸附物导致的宽发光特征。空位可用离子束以低于10纳米的精度进行图案化，表现出单光子发射，并为二维半导体在极限尺度下的先进缺陷工程开辟了可能性。
