Lai Haojie, Zhou Yang, Zhou Huabin, Zhang Ning, Ding Xidong, Liu Pengyi, Wang Xiaomu, Xie Weiguang
Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, China.
School of Physics, Sun Yat-sen University, Guangzhou, Guangdong, 510275, China.
Adv Mater. 2022 May;34(19):e2110278. doi: 10.1002/adma.202110278. Epub 2022 Apr 4.
The development of floating-gate nonvolatile memory (FGNVM) is limited by the charge storage, retention and transfer ability of the charge-trapping layer. Here, it is demonstrated that due to the unique alternate inorganic/organic chain structure and superior optical sensitivity, an insulating 2D Ruddlesden-Popper perovskite (2D-RPP) layer can function both as an excellent charge-storage layer and a photosensitive layer. Optoelectronic memory composed of a MoS /hBN/2D-RPP (MBR) van der Waals heterostructure is demonstrated. The MBR device exhibits unique light-controlled charge-storage characteristics, with maximum memory window up to 92 V, high on/off ratio of 10 , negligible degeneration over 10 s, >1000 program/erase cycles, and write speed of 500 µs. Dependent on the initial states, the MBR optoelectronic memory can be programmed in both positive photoconductivity (PPC) and negative photoconductivity (NPC) modes, with up to 11 and 22 distinct resistance states, respectively. The optical program power for each bit is as low as 36/10 pJ for PPC/NPC. The results not only reveal the potential of 2D-RPP as a superior charge-storage medium in floating-gate memory, but also provides an effective strategy toward fast, low-power and stable optical multi-bit storage and neuromorphic computing.
浮栅非易失性存储器（FGNVM）的发展受到电荷俘获层的电荷存储、保持和转移能力的限制。在此，研究表明，由于独特的交替无机/有机链结构和优异的光学灵敏度，绝缘的二维Ruddlesden-Popper钙钛矿（2D-RPP）层既可以作为出色的电荷存储层，又可以作为光敏层。展示了由MoS/hBN/2D-RPP（MBR）范德华异质结构组成的光电存储器。MBR器件表现出独特的光控电荷存储特性，最大存储窗口高达92 V，开/关比高达10，在10 s内退化可忽略不计，具有超过1000次编程/擦除循环，写入速度为500 µs。根据初始状态，MBR光电存储器可以在正光电导（PPC）和负光电导（NPC）模式下进行编程，分别具有多达11和22个不同的电阻状态。对于PPC/NPC，每位的光学编程功率低至36/10 pJ。这些结果不仅揭示了2D-RPP作为浮栅存储器中优异电荷存储介质的潜力，还为实现快速、低功耗和稳定的光学多位存储及神经形态计算提供了一种有效策略。
