Zha Jiajia, Xia Yunpeng, Shi Shuhui, Huang Haoxin, Li Siyuan, Qian Chen, Wang Huide, Yang Peng, Zhang Zhuomin, Meng You, Wang Wei, Yang Zhengbao, Yu Hongyu, Ho Johnny C, Wang Zhongrui, Tan Chaoliang
Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China.
Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China.
Adv Mater. 2024 Jan;36(3):e2308502. doi: 10.1002/adma.202308502. Epub 2023 Dec 2.
The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te-based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including ≈10 extinction ratio, ≈100 ns switching speed, >4000 cycles, >4000-s retention stability, and nonvolatile multibit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, a multimodal RC system with high recognition accuracy of 90.77% for event-type multimodal handwritten digit-recognition is demonstrated.
近年来，对经济高效数据处理的需求引发了人们对基于新兴二维（2D）材料的神经形态计算的浓厚兴趣。碲（Te）作为一种具有许多有趣特性的新兴范德华（vdW）p型外尔半导体，已被广泛应用于先进的电子/光电子领域。然而，其在用于信息处理的浮栅（FG）存储器件中的应用从未被探索过。在此，报道了一种基于碲的二维vdW异质结构实现的用于多模态储层计算（RC）的电子/光电子FG存储器件。当受到强烈的电/光刺激时，该器件表现出令人印象深刻的非易失性电子存储行为，包括约10的消光比、约100 ns的开关速度、>4000次循环、>4000秒的保持稳定性以及非易失性多位光电可编程特性。当输入刺激减弱时，非易失性存储器会退化为易失性存储器。利用这些丰富的非线性动力学，展示了一个对事件型多模态手写数字识别具有90.77%高识别准确率的多模态RC系统。
