Lee Yoseop, Song Sungmun, Ham Woori, Ahn Seung-Eon
Department of Nano & Semiconductor Engineering, Korea Polytechnic University, Siheung 15073, Korea.
Materials (Basel). 2022 Mar 18;15(6):2251. doi: 10.3390/ma15062251.
Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very promising because of their high remanent polarization (below 10 nm) and high compatibility with complementary metal-oxide-semiconductor (CMOS) processes. In this study, a Si-doped HfO-based FTJ device with a metal-ferroelectric-insulator-semiconductor (MFIS) structure was proposed to maximize the tunneling electro-resistance (TER) effect. The potential barrier modulation effect under applied varying voltage was analyzed, and the possibility of its application as a non-volatile memory device was presented through stability assessments such as endurance and retention tests.
铁电隧道结（FTJ）因其高工作速度、低工作能量和出色的可扩展性，作为先进存储器应用的器件而备受关注。特别是，氧化铪铁电材料因其高剩余极化（低于10纳米）以及与互补金属氧化物半导体（CMOS）工艺的高度兼容性而非常有前景。在本研究中，提出了一种具有金属-铁电体-绝缘体-半导体（MFIS）结构的硅掺杂氧化铪基FTJ器件，以最大化隧穿电阻（TER）效应。分析了施加变化电压下的势垒调制效应，并通过耐久性和保持性测试等稳定性评估，展示了其作为非易失性存储器件的应用可能性。
