Yang Hongcheng, Liu Yizun, Hao Junjie, Tang Haodong, Ding Shihao, Wang Zhaojin, Fang Fan, Wu Dan, Zhang Wenda, Liu Haochen, Xu Bing, Lu Rui, Yang Lei, Liu Pai, Wang Kai, Sun Xiao Wei
Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China.
ACS Appl Mater Interfaces. 2021 Jul 14;13(27):32217-32225. doi: 10.1021/acsami.1c07647. Epub 2021 Jun 29.
Alloyed green-emitting CdZnSeS/ZnS quantum dots (QDs) demonstrate potential applications in solid-state lighting and displays owing to their various advantages, such as high color purity, light conversion efficiency, and color rendering index. However, their applications in white light-emitting diodes (WLEDs) are limited by their poor photostabilities on blue-emitting gallium nitride (GaN) LED chips. In this study, the effect of the specific surface area (SSA) in the coating layers on the photostabilities of QDs was investigated. SSA was adjusted by controlling the proportions of dense aluminum oxide (AlO) layers and porous silica dioxide (SiO) layers to fabricate QD protective layers via a catalyst-free sol-gel method. The results showed that the synthesized AlO possessing the lowest SSA among the synthesis protective layers presented the best QD photostabilities on the LED chips. Moreover, they exhibited a 9.9-fold increase in the operational lifetime () compared to that of pristine QDs. In addition, the QD-based WLED achieved an excellent display performance with a wide color gamut (115%) of the National Television System Committee (NTSC) color gamut standard. This approach offers a promising strategy for enhancing the QD photostabilities for applications in solid-state lighting and displays by coating the protective layers on the QD surface.
合金化的绿色发光CdZnSeS/ZnS量子点（QDs）由于具有高色纯度、光转换效率和显色指数等多种优势，在固态照明和显示领域展现出潜在应用前景。然而，它们在白光发光二极管（WLEDs）中的应用受到其在蓝色发光氮化镓（GaN）LED芯片上较差的光稳定性的限制。在本研究中，研究了涂层中比表面积（SSA）对量子点光稳定性的影响。通过控制致密氧化铝（AlO）层和多孔二氧化硅（SiO）层的比例来调节比表面积，采用无催化剂溶胶-凝胶法制备量子点保护层。结果表明，在合成的保护层中，具有最低比表面积的合成AlO在LED芯片上表现出最佳的量子点光稳定性。此外，与原始量子点相比，它们的工作寿命（）提高了9.9倍。此外，基于量子点的WLED实现了出色的显示性能，具有符合美国国家电视系统委员会（NTSC）色域标准的宽色域（115%）。这种方法通过在量子点表面涂覆保护层，为增强量子点在固态照明和显示应用中的光稳定性提供了一种有前景的策略。
