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探索晶体二维扩展超薄C8-BTBT-C8薄膜的制备依赖性。

Exploring the Preparation Dependence of Crystalline 2D-Extended Ultrathin C8-BTBT-C8 Films.

作者信息

Hawly Tim, Johnson Manuel, Späth Andreas, Nickles Jäkel Hannah, Wu Mingjian, Spiecker Erdmann, Watts Benjamin, Nefedov Alexei, Fink Rainer H

机构信息

Department Chemie und Pharmazie, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstraße 3, 91058 Erlangen, Germany.

Institute of Micro- and Nanostructure Research, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstraße 3, 91058 Erlangen, Germany.

出版信息

ACS Appl Mater Interfaces. 2022 Apr 13;14(14):16830-16838. doi: 10.1021/acsami.2c00097. Epub 2022 Mar 30.

DOI:10.1021/acsami.2c00097
PMID:35352935
Abstract

Crystalline organic semiconducting thin films from the benchmark molecule C8-BTBT-C8 were obtained using physical vapor deposition and various solution-based methods. Utilizing atomic force microscopy and X-ray spectromicroscopy, we illustrate the influence of the underlying growth mechanism and determine the highly preparation-dependent orientation of the thiophene backbone. We observe a continuous trend for crystalline C8-BTBT-C8 thin film domains to extend into the square millimeter-range under near-equilibrium growth conditions. For such well-defined systems, electron diffraction tomography allows us to precisely determine the unit cell directly after film deposition and to reveal an 8° molecular tilt angle with respect to the surface normal. This finding is in almost perfect accordance with the values derived from near-edge X-ray absorption fine structure linear dichroism. Within this work, we shine a light on both the successes and challenges connected to the realization of potent, thiophene-based semiconducting films, paving the way toward square centimeter-sized ultrathin organic crystals and their application in organic circuitry.

摘要

使用物理气相沉积法和各种基于溶液的方法,制备出了以基准分子C8 - BTBT - C8为原料的晶体有机半导体薄膜。利用原子力显微镜和X射线光谱显微镜,我们阐述了潜在生长机制的影响,并确定了噻吩主链高度依赖制备方法的取向。我们观察到,在近平衡生长条件下,晶体C8 - BTBT - C8薄膜畴呈现出延伸至平方毫米范围的连续趋势。对于此类定义明确的体系,电子衍射断层扫描技术使我们能够在薄膜沉积后直接精确确定晶胞,并揭示相对于表面法线8°的分子倾斜角。这一发现与从近边X射线吸收精细结构线性二色性得出的值几乎完全一致。在这项工作中,我们揭示了与实现高效的、基于噻吩的半导体薄膜相关的成功与挑战,为制备平方厘米尺寸的超薄有机晶体及其在有机电路中的应用铺平了道路。

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引用本文的文献

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Precursor Film Growth of 2,7-Dioctyl[1]benzothieno[3,2-][1]benzothiophene (C8-BTBT) in the Smectic a Liquid Crystal Phase for High-Performance Transistor Applications.用于高性能晶体管应用的近晶a液晶相中2,7-二辛基[1]苯并噻吩并[3,2-][1]苯并噻吩(C8-BTBT)的前驱体薄膜生长
Langmuir. 2025 Aug 19;41(32):21816-21824. doi: 10.1021/acs.langmuir.5c02951. Epub 2025 Aug 5.