Liu Kaikai, Jin Naijun, Cheng Haotian, Chauhan Nitesh, Puckett Matthew W, Nelson Karl D, Behunin Ryan O, Rakich Peter T, Blumenthal Daniel J
Opt Lett. 2022 Apr 1;47(7):1855-1858. doi: 10.1364/OL.454392.
We demonstrate 0.034 dB/m loss waveguides in a 200-mm wafer-scale, silicon nitride (SiN) CMOS-foundry-compatible integration platform. We fabricate resonators that measure up to a 720 million intrinsic Q resonator at 1615 nm wavelength with a 258 kHz intrinsic linewidth. This resonator is used to realize a Brillouin laser with an energy-efficient 380 µW threshold power. The performance is achieved by reducing scattering losses through a combination of single-mode TM waveguide design and an etched blanket-layer low-pressure chemical vapor deposition (LPCVD) 80 nm SiN waveguide core combined with thermal oxide lower and tetraethoxysilane plasma-enhanced chemical vapor deposition (TEOS-PECVD) upper oxide cladding. This level of performance will enable photon preservation and energy-efficient generation of the spectrally pure light needed for photonic integration of a wide range of future precision scientific applications, including quantum, precision metrology, and optical atomic clocks.
我们在一个200毫米晶圆级、与氮化硅（SiN）互补金属氧化物半导体（CMOS）代工兼容的集成平台上展示了损耗为0.034 dB/m的波导。我们制造的谐振器在1615 nm波长下具有高达7.2亿的本征品质因数（Q），本征线宽为258 kHz。该谐振器用于实现阈值功率为380 μW的节能布里渊激光器。通过单模横向磁（TM）波导设计与蚀刻的毯状层低压化学气相沉积（LPCVD）80 nm SiN波导芯相结合，并与热氧化物下层和四乙氧基硅烷等离子体增强化学气相沉积（TEOS-PECVD）上层氧化物包层相结合来降低散射损耗，从而实现了这样的性能。这种性能水平将能够实现光子保存以及高效产生未来广泛的精密科学应用（包括量子、精密计量和光学原子钟）的光子集成所需的光谱纯光。
