Syed Nitu, Stacey Alastair, Zavabeti Ali, Nguyen Chung Kim, Haas Benedikt, Koch Christoph T, Creedon Daniel L, Della Gaspera Enrico, Reineck Philipp, Jannat Azmira, Wurdack Matthias, Bamford Sarah E, Pigram Paul J, Tawfik Sherif Abdulkader, Russo Salvy P, Murdoch Billy J, Kalantar-Zadeh Kourosh, McConville Chris F, Daeneke Torben
School of Engineering, RMIT University, Melbourne, VIC 3001, Australia.
School of Physics, The University of Melbourne, Parkville, VIC 3010, Australia.
ACS Nano. 2022 Apr 26;16(4):5476-5486. doi: 10.1021/acsnano.1c09636. Epub 2022 Apr 4.
Indium nitride (InN) has been of significant interest for creating and studying two-dimensional electron gases (2DEG). Herein we demonstrate the formation of 2DEGs in ultrathin doped and undoped 2D InN nanosheets featuring high carrier mobilities at room temperature. The synthesis is carried out via a two-step liquid metal-based printing method followed by a microwave plasma-enhanced nitridation reaction. Ultrathin InN nanosheets with a thickness of ∼2 ± 0.2 nm were isolated over large areas with lateral dimensions exceeding centimeter scale. Room temperature Hall effect measurements reveal carrier mobilities of ∼216 and ∼148 cm V s for undoped and doped InN, respectively. Further analysis suggests the presence of defined quantized states in these ultrathin nitride nanosheets that can be attributed to a 2D electron gas forming due to strong out-of-plane confinement. Overall, the combination of electronic and plasmonic features in undoped and doped ultrathin 2D InN holds promise for creating advanced optoelectronic devices and functional 2D heterostructures.
氮化铟（InN）在二维电子气（2DEG）的制备和研究方面备受关注。在此，我们展示了在超薄的掺杂和未掺杂二维InN纳米片中形成二维电子气，这些纳米片在室温下具有高载流子迁移率。合成过程通过两步基于液态金属的印刷方法进行，随后进行微波等离子体增强氮化反应。大面积分离出厚度约为2±0.2nm的超薄InN纳米片，其横向尺寸超过厘米尺度。室温霍尔效应测量结果显示，未掺杂和掺杂InN的载流子迁移率分别约为216和148 cm² V⁻¹ s⁻¹。进一步分析表明，这些超薄氮化物纳米片中存在确定的量子化状态，这可归因于由于强面外限制而形成的二维电子气。总体而言，未掺杂和掺杂的超薄二维InN中的电子和等离子体特性的结合有望创造先进的光电器件和功能性二维异质结构。
