Pécz Béla, Nicotra Giuseppe, Giannazzo Filippo, Yakimova Rositsa, Koos Antal, Kakanakova-Georgieva Anelia
Centre for Energy Research, Institute for Technical Physics and Materials Science, Konkoly-Thege M. út 29-33, Budapest, 1121, Hungary.
Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi, Strada VIII, n. 5, Zona Industriale, Catania, I-95121, Italy.
Adv Mater. 2021 Jan;33(1):e2006660. doi: 10.1002/adma.202006660. Epub 2020 Nov 23.
The properties of 2D InN are predicted to substantially differ from the bulk crystal. The predicted appealing properties relate to strong in- and out-of-plane excitons, high electron mobility, efficient strain engineering of their electronic and optical properties, and strong application potential in gas sensing. Until now, the realization of 2D InN remained elusive. In this work, the formation of 2D InN and measurements of its bandgap are reported. Bilayer InN is formed between graphene and SiC by an intercalation process in metal-organic chemical vapor deposition (MOCVD). The thickness uniformity of the intercalated structure is investigated by conductive atomic force microscopy (C-AFM) and the structural properties by atomic resolution transmission electron microscopy (TEM). The coverage of the SiC surface is very high, above 90%, and a major part of the intercalated structure is represented by two sub-layers of indium (In) bonded to nitrogen (N). Scanning tunneling spectroscopy (STS) measurements give a bandgap value of 2 ± 0.1 eV for the 2D InN. The stabilization of 2D InN with a pragmatic wide bandgap and high lateral uniformity of intercalation is demonstrated.
二维氮化铟（InN）的性质预计与体相晶体有很大不同。预测其吸引人的性质包括面内和面外激子较强、电子迁移率高、电子和光学性质的应变工程效率高以及在气体传感方面有很强的应用潜力。到目前为止，二维InN的实现仍然难以捉摸。在这项工作中，报道了二维InN的形成及其带隙的测量。通过金属有机化学气相沉积（MOCVD）中的插层过程，在石墨烯和碳化硅（SiC）之间形成了双层InN。通过导电原子力显微镜（C-AFM）研究了插层结构的厚度均匀性，并通过原子分辨率透射电子显微镜（TEM）研究了其结构性质。SiC表面的覆盖率非常高，超过90%，插层结构的主要部分由与氮（N）键合的两层铟（In）组成。扫描隧道谱（STS）测量得出二维InN的带隙值为2±0.1电子伏特。证明了具有实用宽带隙和高插层横向均匀性的二维InN的稳定性。
