Qin Peixin, Yan Han, Fan Benshu, Feng Zexin, Zhou Xiaorong, Wang Xiaoning, Chen Hongyu, Meng Ziang, Duan Wenhui, Tang Peizhe, Liu Zhiqi
School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China.
Adv Mater. 2022 Jun;34(24):e2200487. doi: 10.1002/adma.202200487. Epub 2022 May 16.
The discovery of the anomalous Hall effect in noncollinear antiferromagnetic metals represents one of the most important breakthroughs for the emergent antiferromagnetic spintronics. The tuning of chemical potential has been an important theoretical approach to varying the anomalous Hall conductivity, but the direct experimental demonstration has been challenging owing to the large carrier density of metals. In this work, an ultrathin noncollinear antiferromagnetic Mn Ge film is fabricated and its carrier density is modulated by ionic liquid gating. Via a small voltage of ≈3 V, its carrier density is altered by ≈90% and, accordingly, the anomalous Hall effect is completely switched off. This work thus creates an attractive new way to steering the anomalous Hall effect in noncollinear antiferromagnets.
非共线反铁磁金属中反常霍尔效应的发现是新兴反铁磁自旋电子学最重要的突破之一。化学势的调节一直是改变反常霍尔电导率的重要理论方法，但由于金属的载流子密度较大，直接的实验证明具有挑战性。在这项工作中，制备了一种超薄非共线反铁磁Mn Ge薄膜，并通过离子液体门控对其载流子密度进行调制。通过施加约3 V的小电压，其载流子密度改变了约90%，相应地，反常霍尔效应完全被关闭。因此，这项工作开创了一种在非共线反铁磁体中操控反常霍尔效应的有吸引力的新方法。
