Qin Peixin, Feng Zexin, Zhou Xiaorong, Guo Huixin, Wang Jinhua, Yan Han, Wang Xiaoning, Chen Hongyu, Zhang Xin, Wu Haojiang, Zhu Zengwei, Liu Zhiqi
School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
ACS Nano. 2020 May 26;14(5):6242-6248. doi: 10.1021/acsnano.0c02325. Epub 2020 Apr 21.
We report the successful fabrication of noncollinear antiferromagnetic 0 MnGe thin films on insulating oxide substrates. The anomalous Hall effect and the large parallel negative magnetoresistance that is robust up to 53 T are observed in the thin films, which may provide evidence for the recent theoretical prediction of the existence of Weyl fermions in antiferromagnetic MnGe. More importantly, we integrate the MnGe thin films onto ferroelectric PMN-PT substrates and manipulate the longitudinal resistance reversibly by electric fields at room temperature, demonstrating the anisotropic magnetoresistance effect in noncollinear antiferromagnets, which thus illustrates the potential of antiferromagnetic MnGe for information storage applications.
我们报道了在绝缘氧化物衬底上成功制备非共线反铁磁0 MnGe薄膜。在这些薄膜中观察到反常霍尔效应以及高达53 T时仍很强的大平行负磁阻，这可能为近期关于反铁磁MnGe中存在外尔费米子的理论预测提供证据。更重要的是，我们将MnGe薄膜集成到铁电PMN-PT衬底上，并在室温下通过电场可逆地操纵纵向电阻，证明了非共线反铁磁体中的各向异性磁阻效应，从而说明了反铁磁MnGe在信息存储应用方面的潜力。
