Oh Jin Young, Kim Eun-Mi, Heo Gi-Seok, Kim Dong Hyun, Lee DongWook, Jeong Hae-Chang, Seo Dae-Shik
IT Nano Electronic Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University 134 Shinchon-Dong, Seodaemun-gu Seoul 120-749 Republic of Korea
National Center for Nanoprocess and Equipment, Korea Institute of Industrial Technology 6 Cheomdangwagi-ro 208beon-gil, Buk-gu Gwangju 500-480 South Korea.
RSC Adv. 2021 Dec 20;12(1):88-93. doi: 10.1039/d1ra08425a.
The present study substantiate that ultraviolet-nanoimprint lithography (UV-NIL) can be used to transfer a one-dimensional nano-pattern onto a high-k thin film of aluminum oxide mixed with a UV photocuring agent. Polydimethylsiloxane (PDMS) molds fabricated on silicon wafers were made using deep ultraviolet laser interference lithography in order to investigate one-dimension nanopatterns. These imprinted nano-patterns induce geometric deformations in the liquid crystal (LC), creating collective and elastic properties, which act as a guide for homogeneous alignment. The nanoimprint method can process a large area, so it can be processed much easier, faster, and more accurately than the conventional rubbing method. Moreover, the optical properties of the nano-imprinted aluminum oxide (AlO) thin-film are about 1.5p% superior to that of conventional commercialized cells, so it has a high effect on the luminance and color gamut of the display. After pattern imprinting, atomic force microscope (AFM) was performed to confirm the result. We can compared the cycle of AlO mixed with UV photocuring agent PDMS pattern cycle, the period is 776 and 750 nm, the width is 468 and 450 nm, the spacing is 292 and 300 nm, and the height is 40 and 30 nm. The nano-imprinted film appears to replicate the width, amplitude, and spacing of the PDMS template. In addition, X-ray photoelectron spectroscopy was performed to determine the chemical properties of the thin film and it was confirmed that UV irradiation induces oxidation, thus increases the intensity significantly. The binding energies of Al 2p and C-O spectra were situated at 74.27 ± 0.5 eV and 531.78 ± 0.5 eV, respectively.
本研究证实,紫外纳米压印光刻(UV-NIL)可用于将一维纳米图案转移到与紫外光固化剂混合的氧化铝高k薄膜上。为了研究一维纳米图案,使用深紫外激光干涉光刻技术在硅片上制作了聚二甲基硅氧烷(PDMS)模具。这些压印的纳米图案会在液晶(LC)中引起几何变形,产生集体和弹性特性,从而作为均匀取向的导向。纳米压印方法可以处理大面积,因此与传统的摩擦方法相比,它可以更容易、更快、更准确地进行处理。此外,纳米压印氧化铝(AlO)薄膜的光学性能比传统商业化电池的光学性能高出约1.5p%,因此对显示器的亮度和色域有很大影响。图案压印后,进行了原子力显微镜(AFM)检测以确认结果。我们可以比较混合有紫外光固化剂PDMS图案的AlO的周期,周期分别为776和750nm。宽度分别为468和450nm,间距分别为292和300nm。高度分别为40和30nm。纳米压印薄膜似乎复制了PDMS模板的宽度、幅度和间距。此外,进行了X射线光电子能谱分析以确定薄膜的化学性质,并且证实了紫外照射会诱导氧化,从而显著增加强度。Al 2p和C-O光谱的结合能分别位于74.27±0.5eV和531.78±0.5eV。