Kim Kwan-Ho, Andreev Maksim, Choi Soodon, Shim Jaewoo, Ahn Hogeun, Lynch Jason, Lee Taeran, Lee Jaehyeong, Nazif Koosha Nassiri, Kumar Aravindh, Kumar Pawan, Choo Hyongsuk, Jariwala Deep, Saraswat Krishna C, Park Jin-Hong
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
ACS Nano. 2022 Jun 28;16(6):8827-8836. doi: 10.1021/acsnano.1c10054. Epub 2022 Apr 18.
A rapid surge in global energy consumption has led to a greater demand for renewable energy to overcome energy resource limitations and environmental problems. Recently, a number of van der Waals materials have been highlighted as efficient absorbers for very thin and highly efficient photovoltaic (PV) devices. Despite the predicted potential, achieving power conversion efficiencies (PCEs) above 5% in PV devices based on van der Waals materials has been challenging. Here, we demonstrate a vertical WSe PV device with a high PCE of 5.44% under one-sun AM1.5G illumination. We reveal the multifunctional nature of a tungsten oxide layer, which promotes a stronger internal electric field by overcoming limitations imposed by the Fermi-level pinning at WSe interfaces and acts as an electron-selective contact in combination with monolayer graphene. Together with the developed bottom contact scheme, this simple yet effective contact engineering method improves the PCE by more than five times.
全球能源消耗的迅速激增导致对可再生能源的需求增加,以克服能源资源限制和环境问题。最近,一些范德华材料被视为非常薄且高效的光伏(PV)器件的高效吸收体。尽管有预期的潜力,但基于范德华材料的光伏器件实现高于5%的功率转换效率(PCE)一直具有挑战性。在此,我们展示了一种垂直WSe光伏器件,在一个太阳AM1.5G光照下具有5.44%的高PCE。我们揭示了氧化钨层的多功能性质,它通过克服WSe界面处费米能级钉扎所带来的限制来促进更强的内部电场,并与单层石墨烯结合充当电子选择性接触。与所开发的底部接触方案一起,这种简单而有效的接触工程方法将PCE提高了五倍以上。