基于压电氮化铝（AlN）和氮化铝钪（AlScN）的扫描微镜的静态高压驱动

Static High Voltage Actuation of Piezoelectric AlN and AlScN Based Scanning Micromirrors.

作者信息

Stoeckel Chris, Meinel Katja, Melzer Marcel, Žukauskaitė Agnė, Zimmermann Sven, Forke Roman, Hiller Karla, Kuhn Harald

机构信息

Fraunhofer Institute for Electronic Nano Systems ENAS, 09126 Chemnitz, Germany.

Center for Microtechnologies, Chemnitz University of Technology, 09111 Chemnitz, Germany.

出版信息

Micromachines (Basel). 2022 Apr 15;13(4):625. doi: 10.3390/mi13040625.

DOI:10.3390/mi13040625

PMID:35457927

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9025745/

Abstract

Piezoelectric micromirrors with aluminum nitride (AlN) and aluminum scandium nitride (AlScN) are presented and compared regarding their static deflection. Two chip designs with 2 × 3 mm (Design 1) and 4 × 6 mm (Design 2) footprint with 600 nm AlN or 2000 nm AlScN as piezoelectric transducer material are investigated. The chip with Design 1 and AlScN has a resonance frequency of 1.8 kHz and a static scan angle of 38.4° at 400 V DC was measured. Design 2 has its resonance at 2.1 kHz. The maximum static scan angle is 55.6° at 220 V DC, which is the maximum deflection measurable with the experimental setup. The static deflection per electric field is increased by a factor of 10, due to the optimization of the design and the research and development of high-performance piezoelectric transducer materials with large piezoelectric coefficient and high electrical breakthrough voltage.

摘要

介绍了采用氮化铝（AlN）和氮化铝钪（AlScN）的压电微镜，并对其静态偏转进行了比较。研究了两种芯片设计，尺寸分别为2×3毫米（设计1）和4×6毫米（设计2），压电换能器材料分别为600纳米的AlN或2000纳米的AlScN。采用设计1和AlScN的芯片在400伏直流电压下的共振频率为1.8千赫兹，静态扫描角度为38.4°。设计2的共振频率为2.1千赫兹。在220伏直流电压下，最大静态扫描角度为55.6°，这是实验装置可测量的最大偏转。由于设计的优化以及具有大压电系数和高击穿电压的高性能压电换能器材料的研发，每个电场的静态偏转增加了10倍。