Wisz Grzegorz, Sawicka-Chudy Paulina, Sibiński Maciej, Płoch Dariusz, Bester Mariusz, Cholewa Marian, Woźny Janusz, Yavorskyi Rostyslav, Nykyruy Lyubomyr, Ruszała Marta
Institute of Materials Engineering, College of Natural Science, University of Rzeszow, 1 Pigonia Street, 35-959 Rzeszow, Poland.
Department of Semiconductor and Optoelectronic Devices, Lodz University of Technology, Wólczańska 211/215, 90-924 Lodz, Poland.
Nanomaterials (Basel). 2022 Apr 12;12(8):1328. doi: 10.3390/nano12081328.
In this study, titanium dioxide/copper oxide thin-film solar cells were prepared using the reactive direct-current magnetron sputtering technique. The influence of the deposition time of the top Cu contact layer on the structural and electrical properties of photovoltaic devices was analyzed. The structural and morphological characterization of the TiO/CuO/CuO solar cells was fully studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), and current-voltage (I-V) characteristics. Additionally, using van der Pauw sample geometries, the electrical properties of the titanium dioxide and copper oxide layers were investigated. From the XRD study, solar cells were observed in cubic (CuO), monoclinic (CuO), and TiO phases. In addition, the crystallite size and dislocation density for copper oxide layers were calculated. Basic morphological parameters (thickness, mechanism of growth, and composition of elements) were analyzed via scanning electron microscopy. The thicknesses of the titanium dioxide and copper oxide layers were in the range of 43-55 nm and 806-1223 nm, respectively. Furthermore, the mechanism of growth and the basic composition of the elements of layers were analyzed. The I-V characteristic curve confirms the photovoltaic behavior of two titanium dioxide/copper oxide thin-film structures. The values of short-circuit current density (J) and open-circuit voltage (V) of the solar cells were: 4.0 ± 0.8 µA/cm, 16.0 ± 4.8 mV and 0.43 ± 0.61 µA/cm, 0.54 ± 0.31 mV, respectively. In addition, the authors presented the values of I, P, FF, and R. Finally, the resistivity, carrier concentration, and mobility are reported for selected layers with values reflecting the current literature.
在本研究中，采用反应直流磁控溅射技术制备了二氧化钛/氧化铜薄膜太阳能电池。分析了顶部铜接触层沉积时间对光电器件结构和电学性能的影响。利用X射线衍射（XRD）、扫描电子显微镜（SEM）和电流-电压（I-V）特性对TiO/CuO/CuO太阳能电池进行了全面的结构和形态表征。此外，使用范德堡样品几何结构研究了二氧化钛和氧化铜层的电学性能。通过XRD研究，观察到太阳能电池呈现立方相（CuO）、单斜相（CuO）和TiO相。此外，还计算了氧化铜层的微晶尺寸和位错密度。通过扫描电子显微镜分析了基本的形态学参数（厚度、生长机理和元素组成）。二氧化钛和氧化铜层的厚度分别在43 - 55 nm和806 - 1223 nm范围内。此外，还分析了层的生长机理和元素的基本组成。I-V特性曲线证实了两种二氧化钛/氧化铜薄膜结构的光伏行为。太阳能电池的短路电流密度（J）和开路电压（V）值分别为：4.0±0.8 µA/cm，16.0±4.8 mV和0.43±0.61 µA/cm，0.54±0.31 mV。此外，作者还给出了I、P、FF和R的值。最后，报告了所选层的电阻率、载流子浓度和迁移率，其值反映了当前的文献情况。
