Park Seoungwoong, Song Jaekwang, Kim Tae Kyung, Choi Kwang-Hun, Hyeong Seok-Ki, Ahn Minchul, Kim Hwa Rang, Bae Sukang, Lee Seoung-Ki, Hong Byung Hee
Department of Chemistry, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea.
Graphene Research Center, Advanced Institute of Convergence Technology, Seoul National University, Suwon, Gyeonggi, 16229, South Korea.
Small Methods. 2022 Jun;6(6):e2200116. doi: 10.1002/smtd.202200116. Epub 2022 Apr 23.
Molybdenum disulfide (MoS ) is considered a fascinating material for next-generation semiconducting applications due to its outstanding mechanical stability and direct transition characteristics comparable to silicon. However, its application to stretchable platforms still is a challenging issue in wearable logic devices and sensors with noble form-factors required for future industry. Here, an omnidirectionally stretchable MoS platform with laser-induced strained structures is demonstrated. The laser patterning induces the pyrolysis of MoS precursors as well as the weak adhesion between Si and SiO layers. The photothermal expansion of the Si layer results in the crumpling of SiO and MoS layers and the field-effect transistors with the crumpled MoS are found to be suitable for strain sensor applications. The electrical performance of the crumpled MoS depends on the degree of stretching, showing the stable omnidirectional stretchability up to 8% with approximately four times higher saturation current than its initial state. This platform is expected to be applied to future electronic devices, sensors, and so on.
二硫化钼（MoS₂）因其出色的机械稳定性以及与硅相当的直接跃迁特性，被认为是下一代半导体应用的理想材料。然而，将其应用于可拉伸平台，在未来工业所需的具有独特外形因素的可穿戴逻辑器件和传感器中，仍是一个具有挑战性的问题。在此，展示了一种具有激光诱导应变结构的全向可拉伸MoS₂平台。激光图案化引发了MoS₂前驱体的热解以及Si和SiO₂层之间的弱附着力。Si层的光热膨胀导致SiO₂和MoS₂层起皱，并且发现具有起皱MoS₂的场效应晶体管适用于应变传感器应用。起皱MoS₂的电学性能取决于拉伸程度，在高达8%的拉伸率下显示出稳定的全向拉伸性，饱和电流比其初始状态高约四倍。该平台有望应用于未来的电子器件、传感器等。
