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基于Janus XSSe(X = Mo,W)和Mg(OH)的二维异质结构的电学和光学性质:第一性原理研究

Electronic and optical properties of two-dimensional heterostructures based on Janus XSSe (X = Mo, W) and Mg(OH): a first principles investigation.

作者信息

Lou Junbin, Ren Kai, Huang Zhaoming, Huo Wenyi, Zhu Zhengyang, Yu Jin

机构信息

School of Information Science and Engineering, Jiaxing University Jiaxing Zhejiang China.

School of Mechanical and Electronic Engineering, Nanjing Forestry University Nanjing Jiangsu China

出版信息

RSC Adv. 2021 Sep 2;11(47):29576-29584. doi: 10.1039/d1ra05521f. eCollection 2021 Sep 1.

Abstract

Two-dimensional (2D) materials have attracted numerous investigations after the discovery of graphene. 2D van der Waals (vdW) heterostructures are a new generation of layered materials, which can provide more desirable applications. In this study, the first principles calculation was implemented to study the heterostructures based on Janus TMDs (MoSSe and WSSe) and Mg(OH) monolayers, which were constructed by vdW interactions. Both MoSSe/Mg(OH) and WSSe/Mg(OH) vdW heterostructures have thermal and dynamic stability. Besides, XSSe/Mg(OH) (X = Mo, W) possesses a direct bandgap with a type-I band alignment, which provides promising applications for light-emitting devices. The charge density difference was investigated, and 0.003 (or 0.0042) || were transferred from MoSSe (or WSSe) layer to Mg(OH) layer, and the potential drops were calculated to be 11.59 and 11.44 eV across the interface of the MoSSe/Mg(OH) and WSSe/Mg(OH) vdW heterostructures, respectively. Furthermore, the MoSSe/Mg(OH) and WSSe/Mg(OH) vdW heterostructures have excellent optical absorption wave. Our studies exhibit an effective method to construct new heterostructures based on Janus TMDs and develop their applications for future light emitting devices.

摘要

二维(2D)材料在石墨烯被发现后吸引了众多研究。二维范德华(vdW)异质结构是新一代层状材料,可提供更理想的应用。在本研究中,采用第一性原理计算来研究基于Janus硫族金属化合物(MoSSe和WSSe)和Mg(OH)单层的异质结构,这些异质结构是通过范德华相互作用构建的。MoSSe/Mg(OH)和WSSe/Mg(OH)范德华异质结构都具有热稳定性和动力学稳定性。此外,XSSe/Mg(OH)(X = Mo,W)具有直接带隙和I型能带排列,这为发光器件提供了有前景的应用。研究了电荷密度差,发现有0.003(或0.0042)||从MoSSe(或WSSe)层转移到Mg(OH)层,并且计算得出在MoSSe/Mg(OH)和WSSe/Mg(OH)范德华异质结构的界面上电势降分别为11.59和11.44 eV。此外,MoSSe/Mg(OH)和WSSe/Mg(OH)范德华异质结构具有优异的光吸收波。我们的研究展示了一种基于Janus硫族金属化合物构建新型异质结构并开发其在未来发光器件中应用的有效方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9655/9040575/89c7f9aa0e69/d1ra05521f-f1.jpg

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