Hrdá Jana, Tašková Valéria, Vojteková Tatiana, Slušná Lenka Pribusová, Dobročka Edmund, Píš Igor, Bondino Federica, Hulman Martin, Sojková Michaela
Institute of Electrical Engineering, SAS Dúbravská cesta 9 841 04 Bratislava Slovakia
Faculty of Electrical Engineering and Information Technology, Slovak University of Technology Ilkovičova 3 812 09 Bratislava Slovakia.
RSC Adv. 2021 Aug 10;11(44):27292-27297. doi: 10.1039/d1ra04507e. eCollection 2021 Aug 9.
Recently, few-layer PtSe films have attracted significant attention due to their properties and promising applications in high-speed electronics, spintronics and optoelectronics. Until now, the transport properties of this material have not reached the theoretically predicted values, especially with regard to carrier mobility. In addition, it is not yet known which growth parameters (if any) can experimentally affect the carrier mobility value. This work presents the fabrication of horizontally aligned PtSe films using one-zone selenization of pre-deposited platinum layers. We have identified the Se : Pt ratio as a parameter controlling the charge carrier mobility in the thin films. The mobility increases more than twice as the ratio changes in a narrow interval around a value of 2. A simultaneous reduction of the carrier concentration suggests that ionized impurity scattering is responsible for the observed mobility behaviour. This significant finding may help to better understand the transport properties of few-layer PtSe films.
近年来，几层厚的PtSe薄膜因其特性以及在高速电子学、自旋电子学和光电子学方面的潜在应用而备受关注。到目前为止，这种材料的输运特性尚未达到理论预测值，尤其是在载流子迁移率方面。此外，目前尚不清楚哪些生长参数（如果有的话）会在实验上影响载流子迁移率值。这项工作展示了通过对预沉积铂层进行单区硒化来制备水平取向的PtSe薄膜。我们已经确定Se : Pt比是控制薄膜中电荷载流子迁移率的一个参数。当该比例在2左右的狭窄区间内变化时，迁移率增加了两倍多。载流子浓度的同时降低表明，电离杂质散射是观察到的迁移率行为的原因。这一重要发现可能有助于更好地理解几层厚的PtSe薄膜的输运特性。
