Park Jeong-Hwan, Pristovsek Markus, Cai Wentao, Cheong Heajeong, Kumabe Takeru, Lee Dong-Seon, Seong Tae-Yeon, Amano Hiroshi
Opt Lett. 2022 May 1;47(9):2250-2253. doi: 10.1364/OL.456993.
This Letter describes the impact of shape on micro light-emitting diodes (µLEDs), analyzing 400 µm area µLEDs with various mesa shapes (circular, square, and stripes). Appropriate external quantum efficiency (EQE) can yield internal quantum efficiency (IQE) which decreases with increasing peripheral length of the mesas. However, light extraction efficiency (ηe) increased with increasing mesa periphery. We introduce analysis of Jpeak (the current at peak EQE) since it is proportional to the non-radiative recombination. Etching the sidewalls using tetramethylammonium hydroxide (TMAH) increased the peak EQE and decreased the sidewall dependency of Jpeak. Quantitatively, the TMAH etching reduced non-radiative surface recombination by a factor of four. Hence, shrinking µLEDs needs an understanding of the relationship between non-radiative recombination and ηe, where analyzing Jpeak can offer new insights.
本信函描述了形状对微型发光二极管(µLED)的影响,分析了具有各种台面形状(圆形、方形和条形)的400 µm²面积的µLED。适当的外部量子效率(EQE)可产生内部量子效率(IQE),IQE会随着台面周长的增加而降低。然而,光提取效率(ηe)随着台面周长的增加而提高。我们引入了对Jpeak(EQE峰值处的电流)的分析,因为它与非辐射复合成正比。使用四甲基氢氧化铵(TMAH)蚀刻侧壁提高了EQE峰值并降低了Jpeak对侧壁的依赖性。定量地说,TMAH蚀刻将非辐射表面复合降低了四倍。因此,缩小µLED需要了解非辐射复合与ηe之间的关系,分析Jpeak可以提供新的见解。