Zhou Qingxiao, Zhang Qian, Ju Weiwei, Liu Yanling, Li Jiahui
College of Physics and Engineering, Henan University of Science and Technology Luoyang 471023 People's Republic of China
Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, Henan University of Science and Technology Luoyang 471023 People's Republic of China.
RSC Adv. 2020 Feb 14;10(12):6973-6978. doi: 10.1039/c9ra10772j. eCollection 2020 Feb 13.
We systemically investigate the effect of dopants on the geometrics, electronic and magnetic properties of asymmetric washboard structure of antimonene (aW-Sb) by using density functional theory (DFT) calculations. The large binding energies and short bond lengths indicate the doped systems still maintain high stability. Pristine aW-Sb is a nonmagnetic semiconductor with a narrow band gap, while the doped aW-Sb exhibit metallic by doping. Furthermore, the Ti, V, Cr, Mn and Fe doping induced magnetic states, and the result of spin density indicates that the magnetic moments are mainly localized at dopant and the adjacent Sb atoms.
我们通过使用密度泛函理论(DFT)计算,系统地研究了掺杂剂对锑烯非对称搓板结构(aW-Sb)的几何结构、电子和磁性性质的影响。较大的结合能和较短的键长表明掺杂体系仍保持高稳定性。原始的aW-Sb是具有窄带隙的非磁性半导体,而掺杂后的aW-Sb呈现出金属性。此外,Ti、V、Cr、Mn和Fe掺杂诱导了磁态,自旋密度结果表明磁矩主要定域在掺杂剂和相邻的Sb原子上。