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单层掺杂石墨烯中的库仑衰变率

Coulomb decay rates in monolayer doped graphene.

作者信息

Chiu Chih-Wei, Chung Yue-Lin, Yang Cheng-Hsueh, Liu Chang-Ting, Lin Chiun-Yan

机构信息

Department of Physics, National Kaohsiung Normal University Kaohsiung 824 Taiwan

Department of Physics, National Cheng Kung University Tainan 701 Taiwan

出版信息

RSC Adv. 2020 Jan 13;10(4):2337-2346. doi: 10.1039/c9ra05953a. eCollection 2020 Jan 8.

Abstract

Excited conduction electrons, conduction holes, and valence holes in monolayer electron-doped graphene exhibit unusual Coulomb decay rates. The deexcitation processes are studied using the screened exchange energy. They might utilize the intraband and interband single-particle excitations, as well as the plasmon modes, depending on the quasiparticle states and the Fermi energies. The low-lying valence holes can decay through the undamped acoustic plasmon, so that they present very fast Coulomb deexcitations, nonmonotonous energy dependence, and anisotropic behavior. However, the low-energy conduction electrons and holes are similar to those in a two-dimensional electron gas. The higher-energy conduction states and the deeper-energy valence ones behave similarly in the available deexcitation channels and have a similar dependence of decay rate on the wave vector.

摘要

单层电子掺杂石墨烯中的传导激发电子、传导空穴和价带空穴表现出异常的库仑衰减率。利用屏蔽交换能对去激发过程进行了研究。根据准粒子态和费米能,它们可能利用带内和带间单粒子激发以及等离子体激元模式。低能价带空穴可以通过无阻尼声子等离子体激元衰变,因此它们呈现出非常快的库仑去激发、非单调能量依赖性和各向异性行为。然而,低能传导电子和空穴与二维电子气中的类似。在可用的去激发通道中,高能传导态和深能价带态表现相似,并且衰减率对波矢具有相似的依赖性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bcf5/9048988/4dd1cd58d4cb/c9ra05953a-f1.jpg

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