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ABA 三层石墨烯中的异常电子激发

Unusual electronic excitations in ABA trilayer graphene.

作者信息

Lin Chiun-Yan, Ho Ching-Hong, Wu Jhao-Ying, Lin Ming-Fa

机构信息

Department of Physics, National Cheng Kung University, Tainan, Taiwan.

Center of General Studies, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan.

出版信息

Sci Rep. 2020 Jul 6;10(1):11106. doi: 10.1038/s41598-020-68004-3.

Abstract

The tight-binding model is closely associated with the modified random-phase approximation to thoroughly explore the electron-electron interactions in trilayer AB-stacked graphene. The intralayer and interlayer atomic/Coulomb interactions dominate the collective and electron-hole excitations. The unusual energy bands are directly reflected in the diverse transferred momentum-frequency phase diagrams. There exist three kinds of plasmon modes during the variation of the doping level, being accompanied with the complicated intraband and interband single-particle excitations. The excitation behaviors are greatly diversified by the number of layers. The theoretical predictions require the high-resolution experimental examinations.

摘要

紧束缚模型与修正的随机相位近似密切相关,以全面探索三层AB堆叠石墨烯中的电子-电子相互作用。层内和层间的原子/库仑相互作用主导着集体和电子-空穴激发。异常的能带直接反映在不同的转移动量-频率相图中。在掺杂水平变化期间存在三种等离激元模式,并伴随着复杂的带内和带间单粒子激发。激发行为因层数而有很大差异。理论预测需要高分辨率的实验检验。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a483/7338514/746f0d14af96/41598_2020_68004_Fig1_HTML.jpg

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