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化学稳定的氢和铌共掺杂ZnO透明导电薄膜的制备

Fabrication of chemically stable hydrogen- and niobium-codoped ZnO transparent conductive films.

作者信息

Han Bing, Song Jianmin, Li Junjie, Guo Yajuan, Dai Binting, Meng Xudong, Song Weiye, Yang Fu, Wang Yanfeng

机构信息

Institute of New Energy Science and Technology of Hebei North University Zhangjiakou 075000 China

College of Sciences, Agriculture University of Hebei Baoding 071001 China.

出版信息

RSC Adv. 2019 Apr 24;9(22):12681-12688. doi: 10.1039/c9ra01231a. eCollection 2019 Apr 17.

Abstract

H- and Nb-doped ZnO (HNZO) thin films were fabricated on glass substrates with radio frequency magnetron sputtering. The effect of the flow rate of H has been investigated by analyzing the structural, optical, and electrical properties. The incorporation of H during the deposition of Nb-incorporated ZnO films significantly improved their crystallinity, conductivity, and transmittance. The crystallites of the HNZO films were preferentially oriented in the -axis direction; the films possess high transmittance (approximately 85%) in the visible and near-infrared regions (400 to 1400 nm). The lowest room-temperature resistivity of the HNZO films was measured as 1.28 × 10 Ω cm. Such optical and electrical properties along with the remarkable chemical stability of the HNZO films make them a promising candidate for applications in solar cells.

摘要

采用射频磁控溅射法在玻璃衬底上制备了H掺杂和Nb掺杂的ZnO(HNZO)薄膜。通过分析其结构、光学和电学性质,研究了H流量的影响。在Nb掺杂的ZnO薄膜沉积过程中引入H显著提高了其结晶度、导电性和透光率。HNZO薄膜的微晶优先沿c轴方向取向;这些薄膜在可见光和近红外区域(400至1400nm)具有较高的透光率(约85%)。HNZO薄膜的最低室温电阻率测得为1.28×10Ω·cm。HNZO薄膜的这种光学和电学性质以及显著的化学稳定性使其成为太阳能电池应用的有前途的候选材料。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ebe/9063663/0b39e6135097/c9ra01231a-f1.jpg

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