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多晶二硫化铂薄膜的电子与结构表征

Electronic and structural characterisation of polycrystalline platinum disulfide thin films.

作者信息

Zhussupbekov Kuanysh, Cullen Conor P, Zhussupbekova Ainur, Shvets Igor V, Duesberg Georg S, McEvoy Niall, Ó Coileáin Cormac

机构信息

School of Physics, Trinity College Dublin Dublin 2 Ireland

AMBER Centre, CRANN Institute, Trinity College Dublin Dublin 2 Ireland

出版信息

RSC Adv. 2020 Nov 17;10(69):42001-42007. doi: 10.1039/d0ra07405e.

Abstract

We employ a combination of scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) to investigate the properties of layered PtS, synthesised thermally assisted conversion (TAC) of a metallic Pt thin film. STM measurements reveal the 1T crystal structure of PtS, and the lattice constant is determined to be 3.58 ± 0.03 Å. STS allowed the electronic structure of individual PtS crystallites to be directly probed and a bandgap of ∼1.03 eV was determined for a 3.8 nm thick flake at liquid nitrogen temperature. These findings substantially expand understanding of the atomic and electronic structure of PtS and indicate that STM is a powerful tool capable of locally probing non-uniform polycrystalline films, such as those produced by TAC. Prior to STM/STS measurements the quality of synthesised TAC PtS was analysed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. These results are of relevance to applications-focussed studies centred on PtS and may inform future efforts to optimise the synthesis conditions for thin film PtS.

摘要

我们采用扫描隧道显微镜(STM)和扫描隧道谱(STS)相结合的方法,来研究通过金属铂薄膜的热辅助转化(TAC)合成的层状PtS的性质。STM测量揭示了PtS的1T晶体结构,其晶格常数确定为3.58±0.03 Å。STS能够直接探测单个PtS微晶的电子结构,在液氮温度下,对于一个3.8 nm厚的薄片,确定其带隙约为1.03 eV。这些发现极大地扩展了对PtS原子和电子结构的理解,并表明STM是一种强大的工具,能够局部探测不均匀的多晶薄膜,如通过TAC制备的薄膜。在进行STM/STS测量之前,通过X射线光电子能谱(XPS)和拉曼光谱对合成的TAC PtS的质量进行了分析。这些结果与以PtS为中心的应用导向研究相关,并可能为未来优化薄膜PtS合成条件的努力提供参考。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6ae0/9057923/47c55f0e460c/d0ra07405e-f1.jpg

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