Kim Yejin, Song Gwang Yeom, Nandi Raju, Cho Jae Yu, Heo Jaeyeong, Cho Deok-Yong
IPIT, Department of Physics, Jeonbuk National University Jeonju 54896 Korea
Department of Materials Science and Engineering, Optoelectronics Convergence Research Center, Chonnam National University Gwangju 61186 Republic of Korea
RSC Adv. 2020 Jul 15;10(44):26588-26593. doi: 10.1039/d0ra04384b. eCollection 2020 Jul 9.
The chemical and local structures of vanadium oxide (VO ) thin films prepared by atomic layer deposition (ALD) were investigated by soft X-ray absorption spectroscopy. It is shown that the as-deposited film was a mixture of VO and VO in disordered form, while the chemistry changed significantly after heat treatment, subject to the different gas environment. Forming gas (95% N + 5% H) annealing resulted in a VO composition, consisting mostly of the VO (B) phase with small amount of the VO (M) phase, whereas O annealing resulted in the VO phase. An X-ray circular magnetic dichroism study further revealed the absence of ferromagnetic ordering, confirming the absence of oxygen vacancies despite the reduction of V ions in VO (V) with respect to the precursor used in the ALD (V). This implies that the prevalence of VO in the ALD films cannot be attributed to a simple oxygen-deficiency-related reduction scheme but should be explained by the metastability of the local VO structures.
通过软X射线吸收光谱法研究了采用原子层沉积(ALD)制备的氧化钒(VO )薄膜的化学结构和局部结构。结果表明,沉积态薄膜是无序形式的VO和VO的混合物,而在不同气体环境下进行热处理后,化学组成发生了显著变化。形成气体(95% N + 5% H)退火导致形成VO组成,主要由VO(B)相和少量VO(M)相组成,而O退火则导致形成VO相。X射线圆磁二色性研究进一步揭示不存在铁磁有序,证实尽管相对于ALD中使用的前驱体(V),VO(V)中的V离子发生了还原,但不存在氧空位。这意味着ALD薄膜中VO的普遍存在不能归因于简单的与氧缺乏相关的还原机制,而应由局部VO结构的亚稳性来解释。