具有丰富氧空位的钴掺杂BiVO用于高效光电化学水氧化

Cobalt doped BiVO with rich oxygen vacancies for efficient photoelectrochemical water oxidation.

作者信息

Liu Guoquan, Li Fei, Zhu Yong, Li Jiayuan, Sun Licheng

机构信息

State Key Laboratory of Fine Chemicals, DUT-KTH Joint Education and Research Center on Molecular Devices, Dalian University of Technology Dalian 116024 P. R. China

Department of Chemistry, School of Engineering Sciences in Chemistry, Biotechnology and Health, KTH Royal Institute of Technology Stockholm 10044 Sweden.

出版信息

RSC Adv. 2020 Aug 3;10(48):28523-28526. doi: 10.1039/d0ra01961e.

A facile electrodeposition method was developed to prepare Co-BiVO thin films with rich oxygen vacancies. The resulting photoanode exhibited a photocurrent density of 3.5 mA cm 1.23 V ( reversible hydrogen electrode (RHE), AM 1.5 G), which is over two times higher than that of undoped BiVO.