Kesarwani Rahul, Dey Partha P, Khare Alika
Department of Physics, Indian Institute of Technology Guwahati Guwahati India
RSC Adv. 2019 Mar 12;9(14):7967-7974. doi: 10.1039/c9ra00194h. eCollection 2019 Mar 6.
The surface scaling behavior of nanostructured Cu thin films, grown on glass substrates by the pulsed laser deposition technique, as a function of the deposition time has been studied using height-height correlation function analysis from atomic force microscopy (AFM) images. The scaling exponents , , / and of the films were determined from AFM images. The local roughness exponent, , was found to be ∼0.86 in the early stage of growth of Cu films deposited for 10 minutes while it increased to 0.95 with a longer time of deposition of 20 minutes and beyond this, it was nearly constant. Interface width (rms roughness) scales with depositing time () as ∼ , with the value of the growth exponent, , of 1.07 ± 0.11 and lateral correlation length following = and the value of / = 0.70 ± 0.10. These exponent values convey that the growth dynamics of PLD Cu films can be best described by a combination of local and non-local models under a shadowing mechanism and under highly sticking substrate conditions. From the scaling exponents and power spectral density function, it is concluded that the films follow a mound like growth mechanism which becomes prominent at longer deposition times. All the Cu films exhibited SPR properties where the SPR peak shifts towards red with increasing correlation length () whereas bandwidth increases initially with and thereafter decreases gradually with .
利用原子力显微镜(AFM)图像的高度-高度关联函数分析,研究了通过脉冲激光沉积技术在玻璃衬底上生长的纳米结构铜薄膜的表面缩放行为与沉积时间的关系。从AFM图像确定了薄膜的缩放指数、、/和。发现沉积10分钟的铜薄膜在生长初期的局部粗糙度指数约为0.86,而在沉积20分钟及更长时间时,该指数增加到0.95,在此之后,该指数几乎保持不变。界面宽度(均方根粗糙度)与沉积时间()的关系为~ ,生长指数的值为1.07±0.11,横向关联长度遵循 = ,/的值为0.70±0.10。这些指数值表明,在阴影机制和高粘附衬底条件下,脉冲激光沉积铜薄膜的生长动力学可以用局部和非局部模型的组合来最好地描述。从缩放指数和功率谱密度函数可以得出结论,薄膜遵循丘状生长机制,在较长沉积时间时变得更加突出。所有铜薄膜都表现出表面等离子体共振(SPR)特性,其中SPR峰随着关联长度()的增加向红色移动,而带宽最初随着增加,此后随着逐渐减小。