Dipartimento di Fisica e Astronomia, MATIS CNR-INFM, Università di Catania, via S, Sofia 64, I-95123, Catania, Italy.
Nanoscale Res Lett. 2009 Jan 6;4(3):262-8. doi: 10.1007/s11671-008-9235-0.
Dynamic scaling behavior has been observed during the room-temperature growth of sputtered Au films on SiO2using the atomic force microscopy technique. By the analyses of the dependence of the roughness, σ, of the surface roughness power,P(f), and of the correlation length,ξ, on the film thickness,h, the roughness exponent,α = 0.9 ± 0.1, the growth exponent,β = 0.3 ± 0.1, and the dynamic scaling exponent,z = 3.0 ± 0.1 were independently obtained. These values suggest that the sputtering deposition of Au on SiO2at room temperature belongs to a conservative growth process in which the Au grain boundary diffusion plays a dominant role.
在使用原子力显微镜技术在 SiO2 上室温溅射生长 Au 薄膜的过程中观察到了动态标度行为。通过分析表面粗糙度σ、粗糙度幂律 P(f)和相关长度ξ对薄膜厚度 h 的依赖关系，独立得到粗糙度指数α=0.9±0.1、生长指数β=0.3±0.1和动态标度指数 z=3.0±0.1。这些值表明，室温下在 SiO2 上溅射沉积 Au 属于保守生长过程，其中 Au 晶界扩散起主导作用。
