Purwiandono Gani, Manseki Kazuhiro, Sugiura Takashi
The Graduate School of Natural Science and Technology, Gifu University 501-1193 Japan
Department of Chemistry, Universitas Islam Indonesia 55584 Indonesia.
RSC Adv. 2020 Oct 12;10(61):37576-37581. doi: 10.1039/d0ra07172b. eCollection 2020 Oct 7.
Single-phase InN nanocrystals were synthesized for the first time by a molten salt-based nitridation approach using InCl and LiNH as indium and nitrogen sources, respectively. A molten salt, KCl-LiCl, during nitridation, enabled us to obtain InN nanocrystals at relatively low temperatures ranging from 400 °C to 500 °C. SEM and HR-TEM measurements coupled with XRD data revealed that InN nanocrystals were formed with average grain sizes of approximately 50-60 nm. Notably, the photoelectrochemical cell fabricated using the InN nanocrystals synthesized at 450 °C exhibited a photocurrent response under light irradiation from 400 nm to 880 nm. The precise control of the growth of InN particles using our synthetic approach provides opportunities for developing versatile nitride nanocrystals.
首次采用基于熔盐的氮化方法,分别使用InCl和LiNH作为铟源和氮源,合成了单相InN纳米晶体。在氮化过程中,一种熔盐KCl-LiCl使我们能够在400℃至500℃的相对低温下获得InN纳米晶体。扫描电子显微镜(SEM)和高分辨率透射电子显微镜(HR-TEM)测量以及X射线衍射(XRD)数据表明,形成的InN纳米晶体的平均晶粒尺寸约为50-60nm。值得注意的是,使用在450℃合成的InN纳米晶体制造的光电化学电池在400nm至880nm的光照下表现出光电流响应。使用我们的合成方法精确控制InN颗粒的生长为开发多功能氮化物纳米晶体提供了机会。