氧空位浓度对铟钨氧化物紫外-A光探测器的影响。

Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector.

作者信息

Chen Kuan-Yin, Chang Sheng-Po, Lin Chih-Hung

机构信息

Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University Tainan 70101 Taiwan

National Nano Device Laboratories Tainan 741 Taiwan.

出版信息

RSC Adv. 2018 Dec 20;9(1):87-90. doi: 10.1039/c8ra08803a. eCollection 2018 Dec 19.

DOI:10.1039/c8ra08803a

PMID:35521590

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9059378/

Abstract

An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on-off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10, with a photoresponsivity of 1.9 × 10 A W, as well as a rejection ratio of 2.68 × 10 at a voltage bias of 10 V.

摘要

采用射频磁控溅射制备了氧化铟钨（IWO）紫外（UV）光电探测器。在不同氧分压环境下将IWO薄膜沉积在器件上。随着氧流量比的增加，氧空位被填满，载流子浓度降低。减少诸如氧空位等缺陷的数量对优化器件性能有效。在氧分压为10%时，IWO紫外A光电探测器的开/关电流比可达4.56×10，光响应度为1.9×10 A/W，在10 V的电压偏置下，抑制比为2.68×10。