氧化锌锡薄膜晶体管的光响应。

Photoresponses of Zinc Tin Oxide Thin-Film Transistor.

机构信息

Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan.

出版信息

J Nanosci Nanotechnol. 2020 Mar 1;20(3):1704-1708. doi: 10.1166/jnn.2020.17159.

DOI:10.1166/jnn.2020.17159

PMID:31492333

Abstract

In this study, the optical and electrical properties of a zinc tin oxide (ZTO) thin-film transistor (TFT) were investigated. The TFT was fabricated using ZTO as the active layer, which was deposited by a radio frequency magnetron sputtering system, to form an ultraviolet (UV) photodetector. The device has a threshold voltage of 0.48 V, field-effect mobility of 1.47 cm²/Vs in the saturation region, on/off drain current ratio of 2×10, and subthreshold swing of 0.45 V/decade in a dark environment. Moreover, as a UV photodetector, the device has a long photoresponse time, responsivity of 0.329 A/W, and rejection ratio of 3.19×10⁴ at a gate voltage of -15 V under illumination of wavelength 300 nm.

摘要

在这项研究中，研究了锌锡氧化物（ZTO）薄膜晶体管（TFT）的光电性能。该 TFT 采用 ZTO 作为有源层，通过射频磁控溅射系统沉积，形成紫外（UV）光探测器。在黑暗环境中，该器件的阈值电压为 0.48 V，饱和区的场效应迁移率为 1.47 cm²/Vs，导通/关断漏极电流比为 2×10，亚阈值摆幅为 0.45 V/decade。此外，作为 UV 光探测器，该器件在 300nm 波长的光照射下，栅极电压为-15V 时，具有较长的光响应时间、0.329 A/W 的响应度和 3.19×10⁴的抑制比。