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柔性衬底上的高透明碘化铜薄膜热电发电机

Highly transparent copper iodide thin film thermoelectric generator on a flexible substrate.

作者信息

Coroa J, Morais Faustino B M, Marques A, Bianchi C, Koskinen T, Juntunen T, Tittonen I, Ferreira I

机构信息

CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa Caparica 2829-516 Portugal

Department of Electronics and Nanoengineering, Aalto University P.O. Box 13500 FI-00076 Aalto Finland.

出版信息

RSC Adv. 2019 Nov 1;9(61):35384-35391. doi: 10.1039/c9ra07309d. eCollection 2019 Oct 31.

Abstract

Simultaneously transparent and flexible conductive materials are in demand to follow the current trend in flexible technology. The search for materials with compliant optoelectronic properties, while simultaneously retaining their electric conductivity at high strain deformation, comprises promising opportunities in modern nanotechnology. Copper iodide (CuI) is not only the most transparent and highly conductive p-type material, but its optimization has contributed to improved values in planar thin-film thermoelectrics. In this work, the readiness of CuI thin films to transparent, flexible technology is evidenced. A maximum value of 0.29 for single CuI thin films of 300 nm in thickness is reported. Values of open-circuit voltage , short circuit current and power output of p-n thermoelectric modules of Gallium-doped zinc oxide (GZO) and CuI thin films deposited on a transparent flexible Kapton® (type CS) substrate are reported, and a prototype of a flexible transparent thermoelectric generator based on 17 p-n modules was constructed. Bending analysis of CuI thin films reveals interesting, distinct results when submitted to compression and tension analysis - a behaviour not seen in conventional semiconducting thin films under equivalent strain conditions. A plausible account for such diversity is also included.

摘要

为顺应柔性技术的当前趋势,同时具备透明性和柔性的导电材料备受需求。寻找具有顺应光电特性且在高应变变形下仍能保持导电性的材料,在现代纳米技术中蕴含着诸多机遇。碘化铜(CuI)不仅是最透明且导电性高的p型材料,而且对其进行优化有助于提高平面薄膜热电器件的性能值。在这项工作中,证明了CuI薄膜适用于透明柔性技术。报道了厚度为300nm的单CuI薄膜的最大性能值为0.29。报道了沉积在透明柔性Kapton®(CS型)衬底上的掺镓氧化锌(GZO)和CuI薄膜的p-n热电器件的开路电压、短路电流和功率输出值,并构建了基于17个p-n模块的柔性透明热电器件原型。对CuI薄膜的弯曲分析表明,在进行压缩和拉伸分析时会呈现出有趣且独特的结果——这是在等效应变条件下传统半导体薄膜中未见的行为。文中还对这种多样性给出了合理的解释。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8ec2/9074713/98452ccb32da/c9ra07309d-f1.jpg

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