He Gang, Wang Die, Ma Rui, Liu Mao, Cui Jingbiao
School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University Hefei 230601 P. R. China
Institute of Physical Science and Information Technology, Anhui University Hefei 230601 P. R. China.
RSC Adv. 2019 Oct 21;9(58):33800-33805. doi: 10.1039/c9ra07369h. eCollection 2019 Oct 18.
In current manuscript, a Ge metal-oxide-semiconductor (MOS) capacitor based on HfGdON/Ge gate stacks with an ALD-driven passivation layer has been fabricated, and its interfacial and electrical properties are compared with those of its counterparts that have not undergone passivation treatment. Electrical analyses revealed that the HfGdON/AlO/Ge MOS device exhibits improved performance, including larger permittivity, negligible hysteresis, reduced flat band voltage, good capacitance-voltage behavior, and lower interface state and border trapped oxide charge density. All of these improvements can be ascribed to the suppressed growth of unstable Ge oxides, thus reducing the defective states at or near the HfGdON/Ge interface and improving the interface quality. In addition, detailed analyses of the current conduction mechanisms (CCMs) for Ge MOS capacitors with different passivation treatment were investigated systematically.
在当前的手稿中，已经制备了一种基于具有ALD驱动钝化层的HfGdON/Ge栅堆叠的锗金属氧化物半导体（MOS）电容器，并将其界面和电学性质与其未经过钝化处理的对应物进行了比较。电学分析表明，HfGdON/AlO/Ge MOS器件表现出改进的性能，包括更大的介电常数、可忽略的滞后现象、降低的平带电压、良好的电容-电压行为以及更低的界面态和边界俘获氧化物电荷密度。所有这些改进都可以归因于不稳定锗氧化物生长的抑制，从而减少了HfGdON/Ge界面处或附近的缺陷态并提高了界面质量。此外，还系统地研究了不同钝化处理的锗MOS电容器的电流传导机制（CCM）的详细分析。
