Srinivasan Parthasarathy, Kulandaisamy Arockia Jayalatha, Mani Ganesh Kumar, Babu K Jayanth, Tsuchiya Kazuyoshi, Rayappan John Bosco Balaguru
Centre for Nanotechnology & Advanced Biomaterials (CeNTAB), School of Electrical & Electronics Engineering (SEEE), SASTRA Deemed University Thanjavur 613 401 Tamil Nadu India
Micro/Nano Technology Center, Tokai University Japan.
RSC Adv. 2019 Sep 24;9(52):30226-30239. doi: 10.1039/c9ra04230j. eCollection 2019 Sep 23.
In recent times, the development of breath sensors for the detection of Diabetic Keto-Acidosis (DKA) has been gaining prominent importance in the field of health care and advanced diagnostics. Acetone is one of the prominent biomarkers in the exhaled breath of persons affected by DKA. In this background, nanostructured cobalt oxide sensing elements were fabricated using a spray pyrolysis technique at different deposition temperatures (473 to 773 K in steps of 100 K) towards the fabrication of an acetone sensor. The influence of deposition temperature on the various properties of the nanostructured cobalt oxide thin films was investigated. Formation of cubic spinel phase cobalt oxide was confirmed from the structural analysis. The shifting of plane orientation from (3 1 1) to (2 2 0) at 773 K deposition temperature revealed the migration of cobalt atoms to the highly favorable energy positions. Further, the downshifted peak absorption wavelength and upshifted PL profile at higher deposition temperature confirmed the migration of cobalt ions. The sensor fabricated at higher deposition temperature (773 K) showed a sensing response of 235 at room temperature towards 50 ppm of acetone. Also, the fabricated sensor showed a lower detection limit (LOD) of 1 ppm with the response-recovery times of 6 and 4 s, respectively. The LOD reported here is lower than the minimum threshold level (1.71 ppm) signifying the presence of DKA.
近年来,用于检测糖尿病酮症酸中毒(DKA)的呼吸传感器的开发在医疗保健和先进诊断领域变得越来越重要。丙酮是受DKA影响的人的呼出气体中的主要生物标志物之一。在此背景下,采用喷雾热解技术在不同沉积温度(473至773 K,步长为100 K)下制备了纳米结构的氧化钴传感元件,以制造丙酮传感器。研究了沉积温度对纳米结构氧化钴薄膜各种性能的影响。通过结构分析证实形成了立方尖晶石相氧化钴。在773 K沉积温度下,平面取向从(3 1 1)向(2 2 0)的转变表明钴原子迁移到了高度有利的能量位置。此外,在较高沉积温度下,峰值吸收波长下移和PL谱线上移证实了钴离子的迁移。在较高沉积温度(773 K)下制备的传感器在室温下对50 ppm丙酮的传感响应为235。此外,所制备的传感器的检测下限(LOD)为1 ppm,响应恢复时间分别为6 s和4 s。此处报道的LOD低于表明存在DKA的最低阈值水平(1.71 ppm)。