Egerton R F, Zhu Y
Physics Department, University of Alberta, Edmonton, Alberta T1W 2E2, Canada.
Electron Microscopy and Nanostructure Group, Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973, USA.
Microscopy (Oxf). 2023 Apr 6;72(2):66-77. doi: 10.1093/jmicro/dfac022.
We first review the significance of resolution and contrast in electron microscopy and the effect of the electron optics on these two quantities. We then outline the physics of the generation of secondary electrons (SEs) and their transport and emission from the surface of a specimen. Contrast and resolution are discussed for different kinds of SE imaging in scanning electron microscope (SEM) and scanning-transmission microscope instruments, with some emphasis on the observation of individual atoms and atomic columns in a thin specimen. The possibility of achieving atomic resolution from a bulk specimen at SEM energies is also considered.
我们首先回顾电子显微镜中分辨率和对比度的重要性以及电子光学对这两个量的影响。然后概述二次电子(SE)的产生物理过程及其从样品表面的传输和发射。讨论了扫描电子显微镜(SEM)和扫描透射显微镜仪器中不同类型SE成像的对比度和分辨率,重点是对薄样品中单个原子和原子列的观察。还考虑了在SEM能量下从块状样品实现原子分辨率的可能性。