一种通过逐层旋涂 CsPbBr 量子点来提高钙钛矿发光二极管性能的简单方法。
A simple method to improve the performance of perovskite light-emitting diodes layer-by-layer spin-coating CsPbBr quantum dots.
作者信息
Li Bobo, Li Xiaomeng, Li Xia, Liu Haolin, Li Zhaonan, Xiang Guohong, Liu Yuhan, Zhou Taojie, Fang Xuan, Zhang Zhaoyu
机构信息
School of Science and Engineering, The Chinese University of Hong Kong Shenzhen Guangdong 518172 P. R. China
State Key Laboratory of Inorganic Synthesis and Preparation Chemistry, College of Chemistry, Jilin University Changchun 130012 P. R. China.
出版信息
RSC Adv. 2018 Jul 31;8(48):27201-27206. doi: 10.1039/c8ra05104f. eCollection 2018 Jul 30.
Recently, all-inorganic halide perovskite quantum dots have become a very promising material for light-emitting diodes. Herein, we demonstrate a facile method, namely, layer-by-layer spin-coating of CsPbBr QDs to improve device performance. After optimization of the number of emissive layers, the maximum EQE can be increased from an initial value of 0.69% to 2.31%. Additionally, we inserted a CBP layer between PEDOT:PSS and CsPbBr multilayers to balance charge transportation and recombination. As a result, a 37% improvement in EQE (up to 3.16%) and highest luminance of 2629 cd m are obtained.
最近，全无机卤化物钙钛矿量子点已成为发光二极管非常有前景的材料。在此，我们展示了一种简便的方法，即通过逐层旋涂CsPbBr量子点来提高器件性能。在优化发光层数量后，最大外量子效率（EQE）可从初始值0.69%提高到2.31%。此外，我们在PEDOT:PSS和CsPbBr多层膜之间插入了一层CBP层，以平衡电荷传输和复合。结果，EQE提高了37%（高达3.16%），并获得了2629 cd/m²的最高亮度。
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