Fabrication of nitrogen-doped ZnO nanorod arrays by hydrothermal synthesis and ambient annealing.

Nitrogen-doped ZnO nanorod arrays (N:ZnO NRAs) were fabricated by hydrothermal synthesis using a zinc-ammine complex solution, followed by annealing at elevated temperatures under ambient conditions. After annealing at 400 °C for 1 h, Raman spectra indicated that nitrogen was incorporated in the ZnO crystal structure. NH-ligands in the zinc-ammine complex precursor were incorporated in ZnO crystals during hydrothermal crystal growth and were then ruptured during annealing. Photoluminescence spectra indicated that during post-annealing, the nitrogen was incorporated into the oxygen site, which created accompanying defects such as oxygen vacancies and/or interstitial oxygen. The absorption edge in diffuse-reflectance UV-visible spectra revealed visible absorption after post-annealing. In addition, the N:ZnO NRAs generated strong visible-light-induced photocurrents. Nitrogen doping caused a decline in carrier density, as confirmed by an electrochemical Mott-Schottky plot. These results suggest that this cost-effective fabrication has many potential applications such as solar-induced water splitting.