Fully solution-induced high performance indium oxide thin film transistors with ZrO high-k gate dielectrics.

Solution based deposition has been recently considered as a viable option for low-cost flexible electronics. In this context, research efforts have been increasingly focused on the development of suitable solution-processed materials for oxide based transistors. In this work, we report a fully solution synthesis route, using 2-methoxyethanol as solvent, for the preparation of InO thin films and ZrO gate dielectrics, as well as the fabrication of InO-based TFTs. To verify the possible applications of ZrO thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, fully solution-induced InO TFTs based on ZrO dielectrics have been integrated and investigated. The devices, with an optimized annealing temperature of 300 °C, have demonstrated high electrical performance and operational stability at a low voltage of 2 V, including a high of 4.42 cm V s, low threshold voltage of 0.31 V, threshold voltage shift of 0.15 V under positive bias stress for 7200 s, and large / of 7.5 × 10, respectively. The as-fabricated InO/ZrO TFTs enable fully solution-derived oxide TFTs for potential application in portable and low-power consumption electronics.