Alam Fakhari, He Gang, Yan Jin, Wang Wenhao
School of Materials Science and Engineering, Anhui University, Hefei 230601, China.
Nanomaterials (Basel). 2023 Feb 10;13(4):694. doi: 10.3390/nano13040694.
In this article, we used a simple, non-toxic, environmentally friendly, water-driven route to fabricate the gate dielectric on the Si substrate and successfully integrate the InO/HfO thin film transistor (TFT). All the electrical properties of InO based on HfO were systematically analyzed. The InO/HfO device exhibits the best electrical performance at an optimized annealing temperature of 500 °C, including a high µ of 9 cm V s, a high I/I of 10, a low threshold voltage of 1.1 V, and a low sub-threshold of 0.31 V dec. Finally, test the stability of the bias under positive bias stress (PBS) and negative bias stress (NBS) with threshold shifts (V) of 0.35 and 0.13 V while these optimized properties are achieved at a small operating voltage of 2 V. All experimental results demonstrate the potential application of aqueous solution technology for future low-cost, energy-efficient, large-scale, and high-performance electronics.
在本文中，我们采用了一种简单、无毒、环境友好的水驱动路线在硅衬底上制备栅极电介质，并成功集成了氧化铟/氧化铪薄膜晶体管（TFT）。系统地分析了基于氧化铪的氧化铟的所有电学性能。氧化铟/氧化铪器件在500℃的优化退火温度下表现出最佳的电学性能，包括9 cm² V⁻¹ s⁻¹的高迁移率、10的高开/关比、1.1 V的低阈值电压以及0.31 V dec⁻¹的低亚阈值摆幅。最后，在正偏压应力（PBS）和负偏压应力（NBS）下测试了偏压稳定性，阈值漂移（ΔV）分别为0.35和0.13 V，同时在2 V的小工作电压下实现了这些优化性能。所有实验结果证明了水溶液技术在未来低成本、节能、大规模和高性能电子器件方面的潜在应用。
