All-Water-Driven High-k HfO Gate Dielectrics and Applications in Thin Film Transistors.

In this article, we used a simple, non-toxic, environmentally friendly, water-driven route to fabricate the gate dielectric on the Si substrate and successfully integrate the InO/HfO thin film transistor (TFT). All the electrical properties of InO based on HfO were systematically analyzed. The InO/HfO device exhibits the best electrical performance at an optimized annealing temperature of 500 °C, including a high µ of 9 cm V s, a high I/I of 10, a low threshold voltage of 1.1 V, and a low sub-threshold of 0.31 V dec. Finally, test the stability of the bias under positive bias stress (PBS) and negative bias stress (NBS) with threshold shifts (V) of 0.35 and 0.13 V while these optimized properties are achieved at a small operating voltage of 2 V. All experimental results demonstrate the potential application of aqueous solution technology for future low-cost, energy-efficient, large-scale, and high-performance electronics.