Nakagawa Kenta, Takahashi Hidenori, Shimura Yui, Maki Hideyuki
Department of Applied Physics and Physico-Informatics, Keio University 3-14-1 Hiyoshi, Kohoku-ku Yokohama Kanagawa 223-8522 Japan
Kanagawa Institute of Industrial Science and Technology (KISTEC) 705-1 Shimoimaizumi Ebina Kanagawa 243-0435 Japan.
RSC Adv. 2019 Nov 21;9(65):37906-37910. doi: 10.1039/c9ra07294b. eCollection 2019 Nov 19.
We developed a procedure for direct patterning of graphene with arbitrary position, size, and shape on silicon substrates from a solid-state carbon source without dry etching processing. Our light emitting graphene devices perform on a par with those based on high crystallinity graphene obtained mechanical exfoliation or chemical vapor deposition.
我们开发了一种无需干法蚀刻工艺,即可从固态碳源在硅衬底上直接对石墨烯进行任意位置、尺寸和形状图案化的方法。我们的发光石墨烯器件的性能与基于通过机械剥离或化学气相沉积获得的高结晶度石墨烯的器件相当。