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超快石墨烯发光器件。

Ultrafast Graphene Light Emitters.

机构信息

Department of Physics, Kyung Hee University , Seoul 02447, Republic of Korea.

Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.

出版信息

Nano Lett. 2018 Feb 14;18(2):934-940. doi: 10.1021/acs.nanolett.7b04324. Epub 2018 Jan 22.

Abstract

Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge-carrier dynamics in graphene and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460% enhancement compared to the gray-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2000 K under ambient conditions as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes under electrical excitation. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.

摘要

超快电驱动纳米光源是纳米光子学的关键组成部分。在过去的几十年中,人们已经广泛研究了用于纳米光子平台的基于化合物半导体的光源。然而,具有小尺寸的单片超快光源仍然是一个挑战。在这里,我们展示了电驱动的超快石墨烯光源,其在从可见光到近红外的宽光谱范围内实现了高达 10 GHz 带宽的光脉冲产生。这种快速响应源于石墨烯中的超快载流子动力学以及电子和晶格自由度之间弱的电子-声子耦合。我们还发现,通过改变局域光态密度,用六方氮化硼(hBN)层封装石墨烯强烈地改变了发射光谱,从而与宽峰中心位于 720nm 的灰体热辐射相比,提供了高达 460%的增强。此外,hBN 封装层允许在环境条件下稳定且明亮的可见热辐射,电子温度高达 2000 K,并且在电激发下通过近场耦合到混合极化激元模式实现有效的超快电子冷却。这些高速石墨烯光源为光学通信和其他光电应用的片上光源提供了一个有前途的途径。

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