Etula Jarkko, Wester Niklas, Sainio Sami, Laurila Tomi, Koskinen Jari
Department of Chemistry, School of Chemical Technology, Aalto University P.O. Box 16100 FI-00076 Aalto Finland
Department of Electrical Engineering and Automation, School of Electrical Engineering, Aalto University 02150 Espoo Finland.
RSC Adv. 2018 Jul 24;8(46):26356-26363. doi: 10.1039/c8ra04719g. eCollection 2018 Jul 19.
Iron-doped tetrahedral amorphous carbon thin films (Fe/ta-C) were deposited with varying iron content using a pulsed filtered cathodic vacuum arc system (p-FCVA). The aim of this study was to understand effects of iron on both the physical and electrochemical properties of the otherwise inert sp-rich ta-C matrix. As indicated by X-ray photoelectron spectroscopy (XPS), even ∼0.4 at% surface iron had a profound electrochemical impact on both the potential window of ta-C in HSO and KOH, as well as pseudocapacitance. It also substantially enhanced the electron transport and re-enabled facile outer sphere redox reaction kinetics in comparison to un-doped ta-C, as measured with electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV) using outer-sphere probes Ru(NH), IrCl, and FcMeOH. These increases in surface iron loading were linked to increased surface oxygen content and iron oxides. Unlike few other metals, an iron content even up to 10 at% was not found to result in the formation of sp-rich amorphous carbon films as investigated by Raman spectroscopy. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) investigations found all films to be amorphous and ultrasmooth with values always in the range of 0.1-0.2 nm. As even very small amounts of Fe were shown to dominate the electrochemistry of ta-C, implications of this study are very useful in carbon nanostructure synthesis, where irregular traces of iron can be readily incorporated into the final structures.
采用脉冲过滤阴极真空电弧系统(p-FCVA)制备了铁掺杂四面体非晶碳薄膜(Fe/ta-C),铁含量各不相同。本研究的目的是了解铁对原本惰性的富含sp的ta-C基体的物理和电化学性能的影响。如X射线光电子能谱(XPS)所示,即使表面铁含量约为0.4原子%,也会对ta-C在HSO和KOH中的电位窗口以及赝电容产生深远的电化学影响。与未掺杂的ta-C相比,它还显著增强了电子传输,并重新启用了易于进行的外层球氧化还原反应动力学,这是通过使用外层球探针Ru(NH)、IrCl和FcMeOH的电化学阻抗谱(EIS)和循环伏安法(CV)测量的。表面铁负载量的这些增加与表面氧含量和铁氧化物的增加有关。与其他少数金属不同,通过拉曼光谱研究发现,即使铁含量高达10原子%也不会导致形成富含sp的非晶碳膜。原子力显微镜(AFM)和透射电子显微镜(TEM)研究发现所有薄膜都是非晶态且超光滑的, 值始终在0.1-0.2nm范围内。由于即使是极少量的铁也被证明主导着ta-C的电化学,本研究的意义在碳纳米结构合成中非常有用,在这种合成中,不规则的铁痕量可以很容易地掺入最终结构中。